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Flexible Low-Power Operative Organic Source-Gated Transistors

机译：灵活的低功耗可操作有机源栅晶体管

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摘要

Low-voltage operation and fast switching ability are necessary for wearable electronic devices. Recently, electrolyte dielectric materials have been widely used to decrease driving voltages; however, they often exhibit unwanted doping effects and power dissipation problems. Here, a method for dramatically lowering driving voltages is reported in organic electronics via source-gated transistor (SGT) structures. SGTs are fabricated by evaporating asymmetric metals with different work functions for the source and drain electrodes. Versatile organic semiconductor-based SGTs demonstrate a significantly lower drain voltage (10 V) for the saturation regime compared to that of typical field-effect transistors with the same dielectric layer (80 V). Furthermore, coating reduced Pyronin B (rPyB) onto n-type SGTs decreases the threshold voltage from 51.2 to 0.1 eV and improves air-stability, exhibiting a maintained electron mobility (90%) for 40 d. The air-stability is due to both the energetic and kinetic factors, including a decreased lowest unoccupied molecular orbital level of the n-type semiconductor after doping and covering the active layer with rPyB. Finally, flexible SGTs are fabricated on a Parylene-C substrate that shows highly stable operation in a bending test. The results demonstrate a promising technology for low-power, flexible electronic devices via electrode engineering.
机译：对于可穿戴电子设备，低电压操作和快速切换能力是必需的。近来，电解质介电材料已被广泛用于降低驱动电压。然而，它们经常表现出不良的掺杂效应和功耗问题。在此，通过源极门控晶体管（SGT）结构在有机电子设备中报告了一种大幅降低驱动电压的方法。通过蒸发具有不同功函数的源极和漏极的不对称金属来制造SGT。与具有相同介电层（> 80 V）的典型场效应晶体管相比，基于有机半导体的多功能SGT在饱和状态下的漏极电压（<10 V）明显更低。此外，在n型SGT上涂覆还原的Pyronin B（rPyB）可将阈值电压从51.2降低至0.1 eV，并改善空气稳定性，在40 d内保持电子迁移率（> 90％）。空气稳定性归因于能量和动力学因素，包括在掺杂并用rPyB覆盖有源层后n型半导体的最低未占据分子轨道水平降低。最终，在Parylene-C基板上制造了挠性SGT，该基板在弯曲测试中显示出高度稳定的操作。结果证明了通过电极工程技术用于低功率，柔性电子设备的有前途的技术。

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