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Vertical Organic Field-Effect Transistors

机译：垂直有机场效应晶体管

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摘要

Field-effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field-effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large-area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field-effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields.
机译：场效应晶体管是电子电路和处理器的基本构建块。与无机晶体管相比，成本低，重量轻且易于制造的有机场效应晶体管（OFET）对于大面积柔性电子设备具有吸引力。目前，在有机电子学和光电子学中，具有平面结构的OFET已被广泛研究。然而，它们在实现大电流密度，快速操作速度和出色的机械灵活性方面面临巨大挑战，以推进其潜在的商业化应用。在这种情况下，由垂直堆叠的源极/漏极组成的垂直有机场效应晶体管（VOFET）由于其固有的小沟道长度和独特的工作原理，可以为解决这些问题提供有效的方法。自2004年首次发布VOFET以来，随着器件性能的提高，该领域已取得了令人瞩目的进展。这篇综述的目的是给出VOFET的系统总结，并特别关注器件结构的优化，以改善VOFET的性能和潜在的应用。还讨论了VOFET的发展概况，以及当前的挑战和观点。希望这次审查对于VOFET及其相关研究领域的快速发展的下一步是及时和有价值的。

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  • 来源
    《Advanced Functional Materials》 |2019年第17期|1808453.1-1808453.22|共22页
  • 作者

    Liu Jinyu; Qin Zhengsheng; Gao Haikuo; Dong Huanli; Zhu Jia; Hu Wenping;

  • 作者单位

    Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China|Univ Chinese Acad Sci, Sch Chem & Chem Engn, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China|Univ Chinese Acad Sci, Sch Chem & Chem Engn, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China;

    Beijing Normal Univ, Dept Chem, Beijing 100875, Peoples R China;

    Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China|Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China|Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    device applications; device structures; organic semiconductors; vertical field-effect transistors;

    机译：器件应用;器件结构;有机半导体;垂直场效应晶体管;

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