• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Polarization-Sensitive Ultraviolet Photodetection of Anisotropic 2D GeS_2
【24h】

Polarization-Sensitive Ultraviolet Photodetection of Anisotropic 2D GeS_2

机译：各向异性二维GeS_2的偏振敏感紫外光电检测。

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Polarization-sensitive photodetection in the UV region is highly indispensable in many military and civilian applications. UV-polarized photodetection usually relies on the use of wide bandgap semiconductors with 1D nanostructures requiring complicated nanofabrication processes. Although the emerging anisotropic 2D semiconductors shed light on the detection of polarization with a simple device architecture, bandgaps of such reported 2D semiconductors are too small to be applied for visible-blind UV-polarized photodetection. Here, germanium disulfide (GeS2), the widest bandgap (3 eV) in the family of in-plane anisotropic 2D semiconductors explored to date, is introduced as an ideal candidate for UV-polarized photodetection. The structural, vibrational, and optical anisotropies of GeS2 are systematically investigated from theory to experiment. GeS2-based photodetectors show a strong polarization-dependent photoresponse in the UV region. GeS2 with a wide bandgap and high in-plane anisotropy not only enriches the family of anisotropic 2D semiconductors but also expands the polarized photodetection from the current visible and near-infrared to the brand-new UV region.
机译：在许多军事和民用应用中，UV区域中对偏振敏感的光电检测是必不可少的。紫外偏振光检测通常依赖于具有一维纳米结构的宽带隙半导体的使用，而这种半导体需要复杂的纳米加工工艺。尽管新兴的各向异性2D半导体通过简单的器件架构为偏振检测提供了亮点，但此类报道的2D半导体的带隙太小，无法应用于可见盲UV偏振光检测。在此，介绍了迄今为止探索的平面内各向异性2D半导体家族中最宽的带隙（> 3 eV）的二硫化锗（GeS2），它是UV偏振光检测的理想选择。从理论到实验，系统地研究了GeS2的结构，振动和光学各向异性。基于GeS2的光电探测器在紫外线区域显示出强烈的偏振相关光响应。具有宽禁带和高平面内各向异性的GeS2不仅丰富了各向异性2D半导体家族，而且还将偏振光检测范围从当前的可见光和近红外范围扩展到了全新的UV区。

著录项

  • 来源
    《Advanced Functional Materials》 |2019年第16期|1900411.1-1900411.6|共6页
  • 作者

    Yang Yusi; Liu Shun-Chang; Wang Xia; Li Zongbao; Zhang Yun; Zhang Gengmin; Xue Ding-Jing; Hu Jin-Song;

  • 作者单位

    Chinese Acad Sci, Inst Chem, Educ Ctr Excellence Mol Sci,BNLMS, CAS Key Lab Mol Nanostruct & Nanotechnol,CAS Res, Beijing 100190, Peoples R China|Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China|Peking Univ, Dept Elect, Beijing 100871, Peoples R China;

    Chinese Acad Sci, Inst Chem, Educ Ctr Excellence Mol Sci,BNLMS, CAS Key Lab Mol Nanostruct & Nanotechnol,CAS Res, Beijing 100190, Peoples R China|Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China;

    Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China;

    Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China;

    Chinese Acad Sci, Inst Chem, Educ Ctr Excellence Mol Sci,BNLMS, CAS Key Lab Mol Nanostruct & Nanotechnol,CAS Res, Beijing 100190, Peoples R China;

    Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China|Peking Univ, Dept Elect, Beijing 100871, Peoples R China;

    Chinese Acad Sci, Inst Chem, Educ Ctr Excellence Mol Sci,BNLMS, CAS Key Lab Mol Nanostruct & Nanotechnol,CAS Res, Beijing 100190, Peoples R China|Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China;

    Chinese Acad Sci, Inst Chem, Educ Ctr Excellence Mol Sci,BNLMS, CAS Key Lab Mol Nanostruct & Nanotechnol,CAS Res, Beijing 100190, Peoples R China|Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    germanium disulfide; in-plane anisotropy; UV-polarized photodetection; wide bandgap;

    机译：二硫化锗;面内各向异性;紫外偏振光检测;宽带隙;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号