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首页> 外文期刊>Advanced Functional Materials >A Site-Specific Charge Carrier Control in Monolithic Integrated Amorphous Oxide Semiconductors and Circuits with Locally Induced Optical-Doping Process
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A Site-Specific Charge Carrier Control in Monolithic Integrated Amorphous Oxide Semiconductors and Circuits with Locally Induced Optical-Doping Process

机译：具有局部感应光掺杂工艺的单片集成非晶氧化物半导体和电路中的特定位置电荷载流子控制

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摘要

Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) have found cutting-edge applications in sensor technologies. To reduce manufacturing costs, sensors, analog front end, and digital signal processing circuits need to be integrated on the identical substrate. Unlike traditional silicon-based devices, optimizations for locally controllable electrical parameters of the AOSs have rarely been investigated. Here, photoactivated combustion reduction is utilized as doping motivation for solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) to tune their electrical performance. By controlling parameters of a-IGZO TFTs, which can be partly doped with covering the desired area of the identical substrate, it is possible to match the particular threshold voltage for various circuits. For circuit optimization, automatic integrated circuit modeling spice is carried out to find the best match of the complementary metal-oxide semiconductor circuits. Finally, the site-specific performance of switching TFTs, amplifiers, and ring oscillators implemented with low-temperature solution-processed a-IGZO and p-type single-walled carbon nanotube TFTs is demonstrated. The optical-doped a-IGZO TFTs exhibiting a saturation mobility of >9.15 cm(2) V-1 s(-1) with a locally tunable threshold voltage of -5 - 1.5 V are realized, enabling monolithic integration of functional devices. The resultant circuits demonstrate excellent amplification of 24 dB and an oscillation frequency of 12 kHz for 7-stage ring oscillators.
机译：非晶氧化物半导体（AOS）薄膜晶体管（TFT）已在传感器技术中找到了前沿应用。为了降低制造成本，传感器，模拟前端和数字信号处理电路需要集成在同一基板上。与传统的基于硅的设备不同，很少研究AOS的局部可控电参数的优化。在这里，光活化燃烧还原被用作溶液处理的非晶铟镓锌氧化锌（a-IGZO）的掺杂动机，以调节其电性能。通过控制a-IGZO TFT的参数（可以部分掺杂以覆盖同一衬底的所需区域），可以为各种电路匹配特定的阈值电压。为了优化电路，执行了自动集成电路建模香料，以找到互补金属氧化物半导体电路的最佳匹配。最后，展示了用低温溶液处理的a-IGZO和p型单壁碳纳米管TFT实现的开关TFT，放大器和环形振荡器的特定位置性能。实现了光学掺杂的a-IGZO TFT，它们的饱和迁移率> 9.15 cm（2）V-1 s（-1），局部可调的阈值电压为-5-1.5 V，可实现功能器件的单片集成。对于7级环形振荡器，所得电路显示出出色的24 dB放大率和12 kHz的振荡频率。

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