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首页> 外文期刊>Advanced Functional Materials >Epitaxial Growth of Large-Scale Orthorhombic CsPbBr_3 Perovskite Thin Films with Anisotropic Photoresponse Property
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Epitaxial Growth of Large-Scale Orthorhombic CsPbBr_3 Perovskite Thin Films with Anisotropic Photoresponse Property

机译：具有各向异性光响应特性的大尺寸正交各向异性CsPbBr_3钙钛矿薄膜的外延生长

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摘要

Inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, I) is a promising material for developing novel electronic and optoelectronic devices. Despite the substantial progress that has been made in the development of large perovskite single crystals, the fabrication of high-quality 2D perovskite single-crystal films, especially perovskite with a low symmetry, still remains a challenge. Herein, large-scale orthorhombic CsPbBr3 single-crystal thin films on zinc-blende ZnSe crystals are synthesized via vapor-phase epitaxy. Structural characterizations reveal a "CsPbBr3(110)//ZnSe(100), CsPbBr3[-110]//ZnSe[001] and CsPbBr3[001]//ZnSe[010]" heteroepitaxial relationship between the covering CsPbBr3 layer and the ZnSe growth substrate. It is exciting that the epitaxial film presents an in-plane anisotropic absorption property from 350 to 535 nm and polarization-dependent photoluminescence. Photodetectors based on the epitaxial film exhibit a high photoresponsivity of 200 A W-1, a large on/off current ratio exceeding 10(4), a fast photoresponse time of about 20 ms, and good repeatability at room temperature. Importantly, a strong polarization-dependent photoresponse is also found on the device fabricated using the epitaxial CsPbBr3 film, making the orthorhombic perovskite promising building blocks for optoelectronic devices featured with anisotropy.
机译：无机卤化铯铅钙钛矿（CsPbX3，X = Cl，Br，I）是开发新型电子和光电器件的有前途的材料。尽管在大型钙钛矿单晶的开发方面已经取得了重大进展，但是高质量2D钙钛矿单晶膜的制造，特别是低对称性的钙钛矿的制造仍然是一个挑战。在此，通过气相外延合成在闪锌矿ZnSe晶体上的大规模正交晶CsPbBr3单晶薄膜。结构表征显示“ CsPbBr3（110）// ZnSe（100），CsPbBr3 [-110] // ZnSe [001]和CsPbBr3 [001] // ZnSe [010]”在覆盖的CsPbBr3层与ZnSe生长之间的异质外延关系基质。令人兴奋的是，外延膜呈现出350至535 nm的面内各向异性吸收特性以及偏振相关的光致发光。基于外延膜的光电探测器表现出200 A W-1的高光响应度，超过10（4）的大开/关电流比，约20 ms的快速光响应时间以及在室温下良好的可重复性。重要的是，在使用外延CsPbBr3薄膜制造的器件上还发现了强烈的偏振依赖性光响应，这使得正交晶钙钛矿有望成为具有各向异性的光电器件的基础。

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