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首页> 外文期刊>Advanced Functional Materials >Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter
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Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter

机译：双负差分跨导特性：从器件到电路应用再到四元逆变器

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摘要

Multi-valued logic (MVL) computing, which uses more than three logical states, is a promising future technology for handling huge amounts of data in the forthcoming "big data" era. The feasibility of MVL computing depends on the development of new concept devices/circuits beyond the complementary metal oxide semiconductor (CMOS) technology. This is because many CMOS devices are required to implement basic MVL functions, such as multilevel NOT, AND, and OR. In this study, a novel MVL device is reported with a complementarily controllable potential well, featuring the negative differential transconductance (NDT) phenomenon. This NDT device implemented on the WS2-graphene-WSe2 van der Waals heterostructure is evolved to a double-NDT device operating on the basis of two consecutive NDT phenomena via structural engineering and parallel device configuration. This double-NDT device is intensively analyzed via atomic force microscopy, kelvin probe force microscopy, Raman spectroscopy, and temperature-dependent electrical measurement to gain a detailed understanding of its operating mechanism. Finally, the operation of a quaternary inverter configured with the double-peak NDT device and a p-channel transistor through Cadence circuit simulation is theoretically demonstrated.
机译：使用三个以上逻辑状态的多值逻辑（MVL）计算是在即将到来的“大数据”时代处理海量数据的有前途的未来技术。 MVL计算的可行性取决于超越互补金属氧化物半导体（CMOS）技术的新概念器件/电路的开发。这是因为需要许多CMOS器件来实现基本的MVL功能，例如多级NOT，AND和OR。在这项研究中，报告了一种新型MVL器件，该器件具有可互补控制的势阱，具有负差分跨导（NDT）现象。在WS2-石墨烯-WSe2 van der Waals异质结构上实现的NDT设备通过结构工程和并行设备配置演变为基于两个连续NDT现象运行的双NDT设备。通过原子力显微镜，开尔文探针力显微镜，拉曼光谱和与温度相关的电测量对这种双NDT设备进行了深入分析，以详细了解其工作机理。最后，通过Cadence电路仿真从理论上说明了配置有双峰NDT器件和p沟道晶体管的四级逆变器的操作。

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