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Photoresponsive Transistors Based on Lead-Free Perovskite and Carbon Nanotubes

机译：基于无铅钙钛矿和碳纳米管的光敏晶体管

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摘要

Lead-free perovskite materials are exhibiting bright application prospects in photodetectors (PDs) owing to their low toxicity compared with traditional lead perovskites. Unfortunately, their photoelectric performance is constrained by the relatively low charge conductivity and poor stability. In this work, photoresponsive transistors based on stable lead-free bismuth perovskites CsBi3I10 and single-walled carbon nanotubes (SWCNTs) are first reported. The SWCNTs significantly strengthen the dissociation and transportation of the photogenerated charge carriers, which lead to dramatically improved photoresponsivity, while a decent I-light/I-dark ratio over 10(2) can be maintained with gate modulation. The devices exhibit high photoresponsivity (6.0 x 10(4) A W-1), photodetectivity (2.46 x 10(14) jones), and external quantum efficiency (1.66 x 10(5)%), which are among the best reported results in lead-free perovskite PDs. Furthermore, the excellent stability over many other lead-free perovskite PDs is demonstrated over 500 h of testing. More interestingly, the device also shows the application potential as a light-stimulated synapse and its synaptic behaviors are demonstrated. In summary, the lead-free bismuth perovskite-based hybrid phototransistors with multifunctional performance of photodetection and light-stimulated synapse are first demonstrated in this work.
机译：由于无铅钙钛矿材料与传统的铅钙钛矿相比毒性低，因此在光电探测器（PD）中具有广阔的应用前景。不幸的是，它们的光电性能受到较低的电荷电导率和较差的稳定性的限制。在这项工作中，首先报道了基于稳定的无铅钙钛矿铋CsBi3I10和单壁碳纳米管（SWCNT）的光敏晶体管。 SWCNT显着增强了光生电荷载流子的解离和运输，从而显着提高了光响应性，同时通过栅极调制可以保持超过10（2）的适当的I-light / I-dark比率。这些器件展现出高光响应性（6.0 x 10（4）A W-1），光检测性（2.46 x 10（14）琼斯）和外部量子效率（1.66 x 10（5）％），这些都是报告结果最好的结果适用于无铅钙钛矿PD。此外，经过500个小时的测试，证明了其与许多其他无铅钙钛矿PD相比出色的稳定性。更有趣的是，该设备还显示了光刺激突触的应用潜力，并展示了其突触行为。综上所述，这项工作首先证明了具有光检测和光刺激突触多功能性能的无铅钙钛矿基于铋的混合型光电晶体管。

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