机译:范德华BP / InSe场效应晶体管的层间带间隧穿和负微分电阻
Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Mat Sci & Optoelect Technol Beijing 100049 Peoples R China;
Osaka Univ Grad Sch Engn Div Elect Elect & Informat Engn Suita Osaka 5650871 Japan;
Univ Nottingham Sch Phys & Astron Nottingham NG7 2RD England;
Natl Acad Sci Ukraine Chernivtsi Branch Inst Problems Mat Sci UA-58001 Chernovtsy Ukraine;
Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China|Univ Chinese Acad Sci Coll Mat Sci & Optoelect Technol Beijing 100049 Peoples R China|Beijing Acad Quantum Informat Sci Beijing 100193 Peoples R China;
band-to-band tunneling; BP; InSe heterojunctions; field-effect transistors; negative differential resistance;
机译:范德瓦尔斯BP / Inse异质结用于隧道场效应晶体管
机译:出现的负差分抵抗效应和新型可调电子行为的破损差距Kagse / SiC(2)范德瓦尔斯异质结
机译:界面电荷转移和相互作用驱动InAs /石墨烯范德华异质结构中的整流和负微分电阻行为
机译:具有Van Der Waals接触和负电容的陡坡p型2D WSe
机译:在原子上薄van der Waals半导体异质结构中的层间激子
机译:垂直隧穿单电子晶体管的平面和范德华异质结构
机译:低格子错配Inse-SE垂直范围通过强力费米替代的高性能晶体管的异性结构(小方法8/2020)