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A Semi-Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

机译：通过局部场调制将刷新时间提高了535％的半浮动存储器

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摘要

The recently proposed semi-floating gate memory technology shows the potential to balance conflicts between writing speed and data storage. Although the introduction of the p-n junction greatly improves device writing speed, the inevitable junction leakage limits the further extension of data retention time. A local nonvolatile electric field is introduced by exploiting the polarization of ferroelectric gate dielectric HfZrO4 to modulate the charge leakage speed of the p-n junction since the carrier density of 2D materials can be efficiently regulated. The refresh time is greatly prolonged more than 535%, solving the bottleneck problem of relatively short retention time of previous semi-floating gate memory. In addition, the characteristics of device under low operation voltage is also explored, which can serve for further power reducing. This design realizes the combination of ultrafast writing operation and significant enhanced data retention ability, which provides a new idea of the development for high speed non-volatile memory technology.
机译：最近提出的半浮栅存储技术显示了在写入速度和数据存储之间平衡冲突的潜力。尽管引入了p-n结大大提高了器件写入速度，但不可避免的结泄漏限制了数据保留时间的进一步延长。通过利用铁电栅极电介质HfZrO4的极化来引入局部非易失性电场，以调节p-n结的电荷泄漏速度，因为可以有效地调节2D材料的载流子密度。刷新时间大大延长了超过535％，解决了先前半浮栅存储器的保留时间相对较短的瓶颈问题。此外，还探讨了低工作电压下的器件特性，可进一步降低功耗。这种设计实现了超快写入操作和显着增强的数据保留能力的结合，为高速非易失性存储技术的开发提供了新思路。

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