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Sub-Millimeter-Scale Monolayer p-Type H-Phase VS_2

机译：亚毫米级单层p型H相VS_2

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摘要

2D H-phase vanadium disulfide (VS2) is expected to exhibit tunable semiconductor properties as compared with its metallic T-phase structure, and thus is of promise for future electronic applications. However, to date such 2D H-phase VS2 nanostructures have not been realized in experiment likely due to the polymorphs of vanadium sulfides and thermodynamic instability of H-phase VS2. Preparation of H-phase VS2 monolayer with lateral size up to 250 mu m, as a new member in the 2D transition metal dichalcogenides (TMDs) family, is reported. A unique growth environment is built by introducing the molten salt-mediated precursor system as well as the epitaxial mica growth platform, which successfully overcomes the aforementioned growth challenges and enables the evolution of 2D H-phase structure of VS2. The honeycomb-like structure of H-phase VS2 with broken inversion symmetry is confirmed by spherical aberration-corrected scanning transmission electron microscopy and second harmonic generation characterization. The phase structure is found to be ultra-stable up to 500 K. The field-effect device study further demonstrates the p-type semiconducting nature of the 2D H-phase VS2. The study introduces a new phase-stable 2D TMDs materials with potential features for future electronic devices.
机译：2D H相二硫化钒（VS2）与其金属T相结构相比有望表现出可调谐的半导体性能，因此有望在未来的电子应用中发挥作用。然而，迄今为止，由于硫化钒的多晶型物和H相VS2的热力学不稳定性，目前尚未在实验中实现这种二维H相VS2纳米结构。据报道，作为2D过渡金属双金属卤化物（TMDs）系列的新成员，制备了横向尺寸最大为250μm的H相VS2单层。通过引入熔融盐介导的前驱体系统以及外延云母生长平台，构建了独特的生长环境，该环境成功克服了上述生长难题，并使VS2的2D H相结构得以演化。通过球面像差校正的扫描透射电子显微镜和二次谐波生成表征，证实了具有反转反转对称性的H相VS2的蜂窝状结构。发现相结构在高达500 K的超稳定状态。场效应器件研究进一步证明了2D H相VS2的p型半导体性质。该研究介绍了一种新型的相稳定2D TMDs材料，具有未来电子设备的潜在功能。

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  • 来源
    《Advanced Functional Materials》 |2020年第17期|2000240.1-2000240.9|共9页
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    Huazhong Univ Sci & Technol Sch Mat Sci & Engn State Key Lab Mat Proc & & Mould Technol Wuhan 430074 Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl High Magnet Field Ctr Wuhan 430074 Peoples R China|Huazhong Univ Sci & Technol Dept Phys Wuhan 430074 Peoples R China;

    Huazhong Univ Sci & Technol Sch Phys MOE Key Lab Fundamental Phys Quant Measurements Wuhan 430074 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    2D materials; chemical vapor deposition; p-type semiconductors; transition metal dichalcogenides; vanadium disulfide;

    机译：2D材料;化学气相沉积;p型半导体;过渡金属二卤化物;二硫化钒;

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