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首页> 外文期刊>Advanced Functional Materials >Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi_2O_2Se Nanosheets
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Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi_2O_2Se Nanosheets

机译：基于二维Bi_2O_2Se纳米片的灵敏和超宽带光电晶体管

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摘要

Bi2O2Se, a high-mobility and air-stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se-based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high-quality large-area (approximate to 180 mu m) Bi2O2Se nanosheets synthesized via a modified chemical vapor deposition method with a face-down configuration. The device covers the ultraviolet (UV), visible (Vis), and near-infrared (NIR) wavelength ranges (360-1800 nm) at room temperature, exhibiting a maximum R of 108 696 A W-1 at 360 nm. Upon illumination at 405 nm, the external quantum efficiency, R, and detectivity (D*) of the device reach up to 1.5 x 10(7)%, 50055 A W-1, and 8.2 x 10(12) Jones, respectively, which is attributable to a combination of the photogating, photovoltaic, and photothermal effects. The devices reach a -3 dB bandwidth of 5.4 kHz, accounting for a fast rise time (tau(rise)) of 32 mu s. The high sensitivity, fast response time, and environmental stability achieved simultaneously in these 2D Bi2O2Se phototransistors are promising for high-quality UV and IR imaging applications.
机译：Bi2O2Se是一种高迁移率且空气稳定的2D材料，在集成逻辑电子学和光电学中的应用引起了广泛的关注。但是，在基于Bi2O2Se的器件的宽光谱范围内实现总体高性能仍然是一个挑战。据报道，具有高光响应性（R）的宽带光电晶体管包含高质量的大面积Bi2O2Se纳米片（约180微米），该Bi2O2Se纳米片通过改良的化学气相沉积法以面朝下的方式合成。该器件在室温下覆盖了紫外线（UV），可见光（Vis）和近红外（NIR）波长范围（360-1800 nm），在360 nm处的最大R值为108 696 A W-1。在405 nm处照射时，该器件的外部量子效率R和检测率（D *）分别高达1.5 x 10（7）％，50055 A W-1和8.2 x 10（12）Jones。这归因于光闸效应，光伏效应和光热效应的结合。器件达到5.4 kHz的-3 dB带宽，占32 ms的快速上升时间（tau（rise））。在这些2D Bi2O2Se光电晶体管中同时实现的高灵敏度，快速响应时间和环境稳定性对于高质量的UV和IR成像应用而言是有前途的。

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  • 来源
    《Advanced Functional Materials》 |2019年第50期|1905806.1-1905806.11|共11页
  • 作者

    Tong Tong; Chen Yunfeng; Qin Shuchao; Li Weisheng; Zhang Junran; Zhu Chunhui; Zhang Chunchen; Yuan Xiao; Chen Xiaoqing; Nie Zhonghui; Wang Xinran; Hu Weida; Wang Fengqiu; Liu Wenqing; Wang Peng; Wang Xuefeng; Zhang Rong; Xu Yongbing;

  • 作者单位

    Nanjing Univ Sch Elect Sci & Engn Prov Key Lab Adv Photon & Elect Mat Natl Lab Solid State Microstruct & Jiangsu Nanjing 210023 Jiangsu Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys State Key Lab Infrared Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

    Nanjing Univ Sch Elect Sci & Engn Prov Key Lab Adv Photon & Elect Mat Natl Lab Solid State Microstruct & Jiangsu Nanjing 210023 Jiangsu Peoples R China|Liaocheng Univ Shandong Prov Sch Phys Sci & Informat Engn Key Lab Opt Commun Sci & Technol Liaocheng 252059 Shandong Peoples R China;

    Nanjing Univ Natl Lab Solid State Microstruct Coll Engn & Appl Sci Nanjing 210023 Jiangsu Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210023 Jiangsu Peoples R China;

    Royal Holloway Univ London Dept Elect Engn Surrey TW20 0EX England;

    Nanjing Univ Sch Elect Sci & Engn Prov Key Lab Adv Photon & Elect Mat Natl Lab Solid State Microstruct & Jiangsu Nanjing 210023 Jiangsu Peoples R China|Univ York York Nanjing Joint Ctr Spintron Dept Elect Engn York YO10 5DD N Yorkshire England|Univ York Dept Phys York YO10 5DD N Yorkshire England;

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  • 正文语种 eng
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  • 关键词

    Bi2O2Se nanosheets; broadband phototransistors; CVD growth;

    机译：Bi2O2Se纳米片;宽带光电晶体管;CVD生长;

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