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Seed-Induced Vertical Growth of 2D Bi_2O_2Se Nanoplates by Chemical Vapor Transport

机译：种子诱导的化学气相转移二维Bi_2O_2Se纳米板的垂直生长。

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摘要

As two-dimensional (2D) layered materials attract more attention owing to their unique optical, electrical, and thermal properties, there are persistent efforts to grow high-quality 2D layered materials for fundamental research and device applications. While large-area 2D layered materials with high crystal quality can be obtained through chemical vapor transport, the strong binding between 2D layered materials and substrates poses a significant challenge for attempts to reveal their intrinsic properties and to use these 2D building blocks for constructing advanced heterostructured devices. Therefore, it would be ideal to grow high-quality 2D materials with minimized contact and binding with substrate. Through both calculation and experiment, it is demonstrated that by introducing a seed layer at the nucleation stage, the crystallographic disregistry and the corresponding adhesion energy between 2D materials and substrate can be altered, resulting in a change of crystal surface in contact with the substrate, and therefore vertical growth of 2D materials on substrates. As an example, it is demonstrated that with Bi2O3 serving as a seed layer, vertical growth of 2D plates of Bi2O2Se on mica substrates can be realized. These vertically grown 2D nanoplates of Bi2O2Se can be conveniently transferred with their thermal properties investigated for the first time.
机译：由于二维（2D）层状材料因其独特的光学，电学和热学性质而受到越来越多的关注，因此人们一直在努力开发高质量的2D层状材料，以用于基础研究和设备应用。虽然可以通过化学气相传输获得具有高晶体质量的大面积2D层状材料，但2D层状材料和基底之间的牢固结合对试图揭示其固有特性并使用这些2D构建基块构建高级异质结构提出了重大挑战。设备。因此，理想的是生长高质量的2D材料，同时使其与基材的接触和粘合最小。通过计算和实验均表明，通过在成核阶段引入晶种层，可以改变晶体学失准和2D材料与衬底之间的相应粘附能，从而导致与衬底接触的晶体表面发生变化，因此，二维材料在基板上的垂直生长。作为示例，证明了以Bi 2 O 3作为种子层，可以实现Bi 2 O 2 Se的二维板在云母基板上的垂直生长。这些垂直生长的Bi2O2Se二维2D纳米板可以方便地进行转移，并首次对其热性质进行了研究。

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