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3D Solar-Blind Ga_2O_3 Photodetector Array Realized Via Origami Method

机译：通过折纸方法实现的3D日盲Ga_2O_3光电探测器阵列

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摘要

A 3D solar-blind photodetector array is realized from amorphous Ga2O3 films grown on polyethylene terephthalate substrates via an origami route. The photodetector cells exhibit a dark current of 0.17 nA, and the peak responsivity is about 8.9 A W-1 at 250 nm with a quantum efficiency of 4450%. The photodetector shows a distinct cut-off wavelength at 268 nm with a solar-blind ratio of more than two orders of magnitude (photocurrent ratio between 250 nm/300 nm). The photodetector cells reveal excellent electrical stability after thousands of bending cycles. All the photodetector cells of the 3D photodetector array have a highly consistent performance. In addition, the device can execute the functions of capturing a real-time light trajectory and identifying multipoint light spatial distribution, which cannot be achieved in all the previously reported 2D solar-blind photodetectors. The results suggest new pathways to fabricate 3D photodetectors from conventional semiconductor films, which may find potential applications in optical positioning, tracking, imaging and communications, etc.
机译：3D太阳盲光电探测器阵列是通过折纸工艺在聚对苯二甲酸乙二醇酯基板上生长的非晶Ga2O3薄膜实现的。光电探测器单元的暗电流为0.17 nA，在250 nm处的峰值响应约为8.9 A W-1，量子效率为4450％。光电探测器在268 nm处显示出截然不同的截止波长，日盲率大于两个数量级（光电流比在250 nm / 300 nm之间）。在数千次弯曲循环后，光电探测器单元显示出出色的电稳定性。 3D光电探测器阵列的所有光电探测器单元都具有高度一致的性能。此外，该设备还可以执行捕获实时光轨迹和识别多点光空间分布的功能，而这在所有先前报道的2D太阳盲光探测器中都无法实现。结果表明，从常规半导体膜制造3D光电探测器的新途径可能会在光学定位，跟踪，成像和通信等方面找到潜在的应用。

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