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A Review of Low-Temperature Solution-Processed Metal Oxide Thin-Film Transistors for Flexible Electronics

机译:用于柔性电子的低温溶液加工金属氧化物薄膜晶体管的综述

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摘要

Abstract Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.
机译:摘要解决方案处理,包括印刷技术,是一种用于氧化物薄膜晶体管(TFT)制造的有希望的技术,因为它倾向于是具有高组合物可控性和高通量的成本有效的方法。然而,溶液加工的氧化物TFT受低性能和稳定性问题的限制,需要高温退火。在制造过程中的这种高热预算抑制氧化物TFT施加到柔性电子器件。已经多次尝试在较低的制造温度下促进溶液加工氧化物TFT的所需电气特性。综述了目前正在使用的材料,工艺和结构工程方法方面实现低温(<350℃)溶液加工和印刷氧化物TFT的最近技术。此外,寻址N型和基于P型氧化物基沟道层,栅极介电层和电极层的核心技术。最后,介绍了基于低温溶液加工的氧化TFT的各种多功能和新兴应用,并提出了这一高度前景研究的未来前景。

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