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Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite

机译:基于单相多铁性六方铁氧体的室温非易失性存储器

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摘要

1705771.1-1705771.5%The cross-coupling between electric polarization and magnetization in multiferroic materials provides a great potential for creating next-generation memory devices. Current studies on magnetoelectric (ME) applications mainly focus on ferromagnetic/ferroelectric heterostructures because single-phase multiferroics with strong magnetoelectric coupling at room temperature are still very rare. Here a type of nonvolatile memory device is presented solely based on a single-phase multiferroic hexaferrite Sr3Co2Fe24O41 which exhibits nonlinear magnetoelectric effects at room temperature. The principle is to store binary information by employing the states (magnitude and sign) of the first-order and the second-order magnetoelectric coefficients (alpha and beta), instead of using magnetization, electric polarization, and resistance. The experiments demonstrate repeatable nonvolatile switch of alpha and beta by applying pulsed electric fields at room temperature, respectively. Such kind of memory device using single-phase multiferroics paves a pathway toward practical applications of spin-driven multiferroics.
机译:1705771.1-1705771.5%多铁性材料中的极化和磁化之间的交叉耦合为创建下一代存储设备提供了巨大的潜力。当前在磁电(ME)应用方面的研究主要集中在铁磁/铁电异质结构上,因为在室温下具有强磁电耦合的单相多铁氧体仍然很少。这里,仅基于单相多铁性六价铁氧体Sr3Co2Fe24O41提出了一种非易失性存储器件,该单相多铁性六价铁氧体在室温下表现出非线性的磁电效应。原理是通过使用一阶和二阶磁电系数(α和β)的状态(大小和符号)来存储二进制信息,而不是使用磁化,极化和电阻。实验证明了分别通过在室温下施加脉冲电场可重复进行的α和β非易失性开关。这种使用单相多铁磁的存储设备为自旋驱动多铁磁的实际应用铺平了道路。

著录项

  • 来源
    《Advanced Functional Materials》 |2018年第9期|184-188|共5页
  • 作者单位

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    hexaferrites; magnetoelectric; multiferroics; nonvolatile memory;

    机译:六铁氧体;磁电;多铁性;非易失性存储器;

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