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Shift of the Branching Point of the Side-Chain in Naphthalenediimide (NDI)-Based Polymer for Enhanced Electron Mobility and All-Polymer Solar Cell Performance

机译:萘二酰亚胺(NDI)基聚合物中侧链支化点的转移,以增强电子迁移率和全聚合物太阳能电池性能

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摘要

The branching point of the side-chain of naphthalenediimide (NDI)-based conjugated polymers is systematically controlled by incorporating four different side-chains, i.e., 2-hexyloctyl (P(NDI1-T)), 3-hexylnonyl (P(NDI2-T)), 4-hexyldecyl (P(NDI3-T)), and 5-hexylundecyl (P(NDI4-T)). When the branching point is located farther away from the conjugated backbones, steric hindrance around the backbone is relaxed and the intermolecular interactions between the polymer chains become stronger, which promotes the formation of crystalline structures in thin film state. In particular, thermally annealed films of P(NDI3-T) and P(NDI4-T), which have branching points far away from the backbone, possess more-developed bimodal structure along both the face-on and edge-on orientations. Consequently, the field-effect electron mobilities of P(NDIm-T) polymers are monotonically increased from 0.03 cm(2) V-1 s(-1) in P(NDI1-T) to 0.22 cm(2) V-1 s(-1) in P(NDI4-T), accompanied by reduced activation energy and contact resistance of the thin films. In addition, when the series of P(NDIm-T) polymers is applied in all-polymer solar cells (all-PSCs) as electron acceptor, remarkably high-power conversion efficiency of 7.1% is achieved along with enhanced current density in P(NDI3-T)-based all-PSCs, which is mainly attributed to red-shifted light absorption and enhanced electron-transporting ability.
机译:萘二酰亚胺(NDI)基共轭聚合物的侧链支化点通过并入四个不同的侧链来系统控制,即2-己基辛基(P(NDI1-T)),3-己基壬基(P(NDI2- T)),4-己基癸基(P(NDI3-T))和5-己基十一烷基(P(NDI4-T))。当分支点位于远离共轭骨架的位置时,骨架周围的空间位阻被放松,聚合物链之间的分子间相互作用变得更强,这促进了薄膜状态下晶体结构的形成。特别地,具有远离骨架的分支点的P(NDI3-T)和P(NDI4-T)的热退火膜沿面朝和边沿朝着两个方向具有更发达的双峰结构。因此,P(NDIm-T)聚合物的场效应电子迁移率从P(NDI1-T)中的0.03 cm(2)V-1 s(-1)单调增加到0.22 cm(2)V-1 s (-1)在P(NDI4-T)中,伴随着减小的活化能和薄膜的接触电阻。此外,当将系列P(NDIm-T)聚合物应用于全聚合物太阳能电池(all-PSC)作为电子受体时,P(N)的电流密度提高,同时实现了7.1%的高功率转换效率。基于NDI3-T)的全PSC,主要归因于红移的光吸收和增强的电子传输能力。

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