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首页> 外文期刊>Advanced Functional Materials >Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics
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Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics

机译：具有定向2D SnS层的大面积SnS膜的生长，用于高能效宽带光电

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摘要

The anisotropic properties of 2D orthorhombic SnS (tin monosulfide, p-type) layers can be utilized in energy-efficient optoelectronics by growing 2D SnS layers with a preferred orientation. To meet such a need, a strategy for growing SnS layers with the control of structural parameters such as orientation and thickness is highly desired. This report demonstrates a simple procedure for growing a large-area SnS thin film composed of nanoscale SnS platelets with a controlled orientation relative to the surface via a single-step process involving in situ sulfur depletion and phase structural transition of the sputter-deposited SnS2 particles. The synthesized SnS films show good optoelectronic performances such as high signal-to-noise ratios, linear dynamic range, and high response speeds. In addition, the orientation of the SnS platelets is found to control the optoelectronic properties such as the electronic junction formation and the optical reflectance. The orientation-controlled SnS layers on Si substrate operate as a good photosensor with a good zero-bias photoresponse over a wide range of wavelengths including ultraviolet, visible, and near-infrared. The device performances evaluated from the transient photovoltage, photocurrent, Mott-Schottky characteristics, and impedance spectroscopy are all well correlated with the geometric orientation of the 2D SnS layers within the film.
机译：通过生长具有优选取向的2D SnS层，可以将2D正交晶体SnS（单硫化锡，p型）层的各向异性用于节能光电。为了满足这种需求，非常需要一种通过控制诸如取向和厚度的结构参数来生长SnS层的策略。该报告展示了一种简单的步骤，该步骤可通过涉及原位硫耗竭和溅射沉积SnS2颗粒的相结构转变的单步工艺来生长由纳米级SnS薄片组成的大面积SnS薄膜，该薄片相对于表面具有可控的取向。 。合成的SnS薄膜具有良好的光电性能，例如高信噪比，线性动态范围和高响应速度。另外，发现SnS血小板的取向可控制光电性质，例如电子结的形成和光反射率。 Si衬底上受方向控制的SnS层可作为良好的光电传感器，在包括紫外线，可见光和近红外在内的各种波长范围内具有良好的零偏光响应。从瞬态光电压，光电流，Mott-Schottky特性和阻抗光谱学评估的器件性能都与薄膜中2D SnS层的几何取向密切相关。

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