All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-lnduced Photocurrent

Gao Xu Dong; Fei Guang Tao; Zhang Yao; Zhang Li De; Hu Ze Min

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All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-lnduced Photocurrent

机译：全光输入晶体管：等离子诱导的光电流的光控增强

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摘要

Although phototransistors for controlling photocurrent with electricity have been studied intensively for several decades, transistors with all-optical inputs that can control the photocurrent with light have not been investigated thus far. In this paper, a plasmonic porous Ag/TiO2 transistor is fabricated with all-optical inputs. One light input acts as the source to generate a plasmonic-hot-electron photocurrent, while the other gate light changes the current channel by adjusting the height of an Ag/TiO2 Schottky barrier. As a result, the plasmon-induced photocurrent generated by the source light can be enhanced by several to one hundred times by controlling the gate light. In addition to signal enhancement, the device can also be used for signal modulation and switching.

机译：尽管数十年来已经对用于通过电来控制光电流的光电晶体管进行了深入研究，但是迄今为止，尚未研究具有可以通过光来控制光电流的全光输入的晶体管。在本文中，制造了具有全光输入的等离子体多孔Ag / TiO2晶体管。一个光输入用作产生等离子体热电子光电流的源，而另一个栅极光通过调整Ag / TiO2肖特基势垒的高度来改变电流通道。结果，通过控制栅极光，由源光产生的等离子体激元诱导的光电流可以提高几倍至一百倍。除了信号增强之外，该设备还可以用于信号调制和切换。

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来源
《Advanced Functional Materials》 |2018年第40期|1802288.1-1802288.8|共8页
作者
Gao Xu Dong; Fei Guang Tao; Zhang Yao; Zhang Li De; Hu Ze Min;
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作者单位

Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China;

Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China;

Univ Basque Country, CSIC, Mat Phys Ctr, ES-20018 Donostia San Sebastian, Spain;

Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China;

Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, POB 1129, Hefei 230031, Anhui, Peoples R China;

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正文语种 eng
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关键词
Ag/TiO2; oxygen adsorption; photocurrents; plasmon-induced currents; transistors;

机译：Ag / TiO2;氧吸附;光电流;等离子体激元电流;晶体管;

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机译：优异的C-60 /石墨烯/ SWCNT异质结，具有光控增强的光电流
2. Gate-enhanced photocurrent of (6,5) single-walled carbon nanotube based field effect transistor [J] . Park Ki Hong, Lee Seung-Hoon, Toshimitsu Fumiyuki, Carbon: An International Journal Sponsored by the American Carbon Society . 2018,第期

机译：（6,5）单壁碳纳米管基场效应晶体管的栅极增强光电流
3. Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots [J] . Sang Moo Lee, Si Jin Park, Kwang Ho Lee, Applied Physics Letters . 2015,第3期

机译：具有量子点的掺Ge的InGaO薄膜晶体管的光电流增强
4. Plasmon-lnduced Photodegradation of Toxic Pollutants with Ag/Agl/Bi_2WO_6 under Visile-Light Irradiation [C] . Ming-Sheng Gui, Peng-Fei Wang, Miao-Miao Tang, International Conference on Advances in Energy and Environmental Science . 2013

机译：粘性光照射下的AG / AGL / BI_2WO_6的血管抑制毒性污染物的光降解
5. Photocurrent spectroscopy of pentacene thin film transistors. [D] . Breban, Mihaela. 2006

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6. Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength [O] . Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, 2019

机译：电信波长的Low低掺杂硅晶体管中的室温共振光电流
7. Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity [O] . Huang, Yuan, Zang, Huidong, Chen, Jia -Shiang, 2016

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All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-lnduced Photocurrent

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