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首页> 外文期刊>Advanced Functional Materials >Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport
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Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

机译：MacEtch缩放纳米级紧密堆积硅通孔的纵横比：载流子生成和质量传输的动力学

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摘要

Metal-assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet etching method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves as the catalyst. However, producing vertical via arrays using MacEtch, which requires a pattern of discrete metal disks as the catalyst, has often been challenging because of the detouring of individual catalyst disks off the vertical path while descending, especially at submicron scales. Here, the realization of ordered, vertical, and high aspect ratio silicon via arrays by MacEtch is reported, with diameters scaled from 900 all the way down to sub-100 nm. Systematic variation of the diameter and pitch of the metal catalyst pattern and the etching solution composition allows the extraction of a physical model that, for the first time, clearly reveals the roles of the two fundamental kinetic mechanisms in MacEtch, carrier generation and mass transport. Ordered submicron diameter silicon via arrays with record aspect ratio are produced, which can directly impact the through-silicon-via technology, high density storage, photonic crystal membrane, and other related applications.
机译：金属辅助化学刻蚀（MacEtch）作为一种各向异性的湿法刻蚀方法已经显示出巨大的成功，该方法可生产超高深宽比的半导体纳米线阵列，其中金属网状图案充当催化剂。但是，使用MacEtch生产垂直通孔阵列通常需要挑战，因为MacEtch要求使用离散的金属盘作为催化剂，但由于单个催化剂盘在下降时会偏离垂直路径，尤其是在亚微米级，因此会偏离垂直路径。此处报道了MacEtch实现的有序，垂直和高纵横比硅通孔阵列的实现，其直径从900一直缩小到100 nm以下。金属催化剂图案和蚀刻溶液成分的直径和间距的系统变化允许提取物理模型，该模型首次清楚地揭示了MacEtch中两个基本动力学机制的作用，即载流子生成和质量传输。生产出具有记录长宽比的有序亚微米直径硅通孔阵列，可以直接影响硅通孔技术，高密度存储，光子晶体膜和其他相关应用。

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  • 来源
    《Advanced Functional Materials》 |2017年第12期|1605614.1-1605614.8|共8页
  • 作者

    Kim Jeong Dong; Mohseni Parsian K.; Balasundaram Karthik; Ranganathan Srikanth; Pachamuthu Jayavel; Coleman James J.; Li Xiuling;

  • 作者单位

    Univ Illinois, Mat Res Lab, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Champaign, IL 61801 USA;

    Univ Illinois, Mat Res Lab, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Champaign, IL 61801 USA|Rochester Inst Technol, Microsyst Engn, Rochester, NY 14623 USA;

    Univ Illinois, Mat Res Lab, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Champaign, IL 61801 USA;

    SanDisk, Milpitas, CA 95035 USA;

    SanDisk, Milpitas, CA 95035 USA;

    Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA|Univ Texas Dallas, Dept Mat Sci, Richardson, TX 75080 USA;

    Univ Illinois, Mat Res Lab, Micro & Nanotechnol Lab, Dept Elect & Comp Engn, Champaign, IL 61801 USA|Kyushu Univ, Int Inst Carbon Neutral Energy Res I2CNER, Fukuoka 8190395, Japan;

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