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首页> 外文期刊>ACS applied materials & interfaces >CMOS-Compatible Catalyst for MacEtch: Titanium Nitride-Assisted Chemical Etching in Vapor phase for High Aspect Ratio Silicon Nanostructures
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CMOS-Compatible Catalyst for MacEtch: Titanium Nitride-Assisted Chemical Etching in Vapor phase for High Aspect Ratio Silicon Nanostructures

机译：CMOS相容催化剂用于丙泥：高纵横比硅纳米结构的气相中氮化钛辅助化学蚀刻

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摘要

Metal-assisted chemical etching (MacEtch) is an emerging anisotropic chemical etching technique that has been used to fabricate high aspect ratio semiconductor micro- and nanostructures. Despite its advantages in unparalleled anisotropy, simplicity, versatility, and damage-free nature, the adaptation of MacEtch for silicon (Si)-based electronic device fabrication process is hindered by the use of a gold (Au)-based metal catalyst, as Au is a detrimental deep-level impurity in Si. In this report, for the first time, we demonstrate CMOS-compatible titanium nitride (TiN)-based MacEtch of Si by establishing a true vapor-phase (VP) MacEtch approach in order to overcome TiN-MacEtch-specific challenges. Whereas inverse-MacEtch is observed using conventional liquid phase MacEtch because of the limited mass transport from the strong adhesion between TiN and Si, the true VP etch leads to forward MacEtch and produces Si nanowire arrays by engraving the TiN mesh pattern in Si. The etch rate as a function of etch temperature, solution concentration, TiN dimension, and thickness is systematically characterized to uncover the underlying nature of MacEtching using this new catalyst. VP MacEtch represents a significant step toward scalability of this disruptive technology because of the high controllability of gas phase reaction dynamics. TiN-MacEtch may also have direct implications in embedded TiN-based plasmonic semiconductor structures for photonic applications.
机译：金属辅助化学蚀刻（MARECH）是一种新的各向异性化学蚀刻技术，用于制造高纵横比半导体微型和纳米结构。尽管其具有无与伦比的各向异性，简单，多功能性和无损坏性质，但通过使用金（Au）的金属催化剂，阻碍了硅（Si）的电子设备制造工艺的丙烯（Si）的适应性。是Si中有害的深层杂质。在本报告中，我们首次证明了通过建立真正的气相（VP）克切方法来展示基于SI的CMOS兼容的氮化钛（TIN），以克服特定的锡克切特定的挑战。当使用传统的液相丙凝来观察逆麦克入，因为从锡和Si之间的强粘附性具有有限的质量传输，则真正的VP蚀刻导致通过雕刻Si中的锡网图案来前进并产生Si纳米线阵列。系统地，蚀刻速率作为蚀刻温度，溶液浓度，锡尺寸和厚度的函数，以使用该新催化剂揭示胶凝剂的潜在性质。由于气相反应动力学的高可控性，VP MACETCH表示这种破坏性技术的可扩展性的重要步骤。锡克切还可以在用于光子应用的基于嵌入的锡基等离子体半导体结构中具有直接影响。

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