• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films
【24h】

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

机译：铁电薄膜的纳米缺陷工程及其对畴壁动力学的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Defect engineering is one of the cornerstones of the modern electronics industry. Almost all electronic devices include materials that have been doped by ion bombardment. For materials where crystallinity is essential, such as ferroelectrics, defect type and concentration can vastly influence properties and are often used to optimize device performance. This study shows a method to effectively control the density and position on the nanoscale of defect sites in thin films of Pb(Zr, Ti) O-3 via focused ion beam microscopy. This allows for exceptional clarity of observation of the role of defects in nucleation, polarization switching, and domain wall interaction through investigation with piezoresponse force microscopy and transmission electron microscopy, adding insight to accepted but seldom-demonstrated facts on defect-induced effects. This nanoscale defect engineering can be used as a tool to control material properties, and furthermore, a route is demonstrated toward a practical application.
机译：缺陷工程是现代电子工业的基石之一。几乎所有电子设备都包含经过离子轰击掺杂的材料。对于诸如铁电体等对结晶度至关重要的材料，缺陷类型和浓度会极大地影响性能，通常用于优化器件性能。这项研究显示了一种通过聚焦离子束显微镜有效控制Pb（Zr，Ti）O-3薄膜中缺陷位点的密度和位置的方法。通过使用压电响应力显微镜和透射电子显微镜进行调查，可以异常清晰地观察缺陷在成核，极化转换和畴壁相互作用中的作用，从而增加了对缺陷诱发效应的公认但鲜为人知的事实的认识。这种纳米级缺陷工程可以用作控制材料性能的工具，此外，还展示了走向实际应用的途径。

著录项

  • 来源
    《Advanced Functional Materials》 |2017年第15期|1605196.1-1605196.8|共8页
  • 作者

    McGilly Leo J.; Sandu Cosmin S.; Feigl Ludwig; Damjanovic Dragan; Setter Nava;

  • 作者单位

    Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland|3D OXIDES, 130 Rue Gustave Eiffel, F-01630 St Genis Pouilly, France;

    Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland|KIT, Inst Photon Sci & Synchrotron Radiat, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany;

    Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland;

    Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号