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首页> 外文期刊>Advanced Functional Materials >An Ultrahigh Responsivity (9.7 mA W-1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures
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An Ultrahigh Responsivity (9.7 mA W-1) Self-Powered Solar-Blind Photodetector Based on Individual ZnO-Ga2O3 Heterostructures

机译：基于单个ZnO-Ga2O3异质结构的超高响应（9.7 mA W-1）自供电太阳盲光电探测器

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摘要

Highly crystallized ZnO-Ga2O3 core-shell heterostructure microwire is synthesized by a simple one-step chemical vapor deposition method, and constructed into a self-powered solar-blind (200-280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W-1) at 251 nm with a high UV/visible rejection ratio (R-251 nm/R-400 nm) of 6.9 x 10(2) under zero bias. The self-powered device has a fast response speed with rise time shorter than 100 mu s and decay time of 900 mu s, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self-powered solar-blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the highperformance self-powered photodetectors.
机译：通过简单的一步化学气相沉积法合成了高度结晶的ZnO-Ga2O3核-壳异质结构微线，并将其构建为具有266nm截止波长的自供电太阳能百叶窗（200-280 nm）光电探测器。该器件在零偏压下在251 nm处具有超高响应度（9.7 mA W-1），具有6.9 x 10（2）的高UV /可见光抑制比（R-251 nm / R-400 nm）。自供电设备具有较快的响应速度，上升时间分别短于100μs和900μs。超高的响应度，高的紫外线/可见光抑制比和快速的响应速度使其非常适合实际的自供电遮阳帘检测。此外，这种微结构异质结设计方法将为实现高性能自供电光电探测器提供一种新方法。

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  • 来源
    《Advanced Functional Materials》 |2017年第17期|1700264.1-1700264.8|共8页
  • 作者

    Zhao Bin; Wang Fei; Chen Hongyu; Zheng Lingxia; Su Longxing; Zhao Dongxu; Fang Xiaosheng;

  • 作者单位

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China;

    Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;

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