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首页> 外文期刊>Advanced Functional Materials >Interface Doping for Ohmic Organic Semiconductor Contacts Using Self-Aligned Polyelectrolyte Counterion Monolayer
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Interface Doping for Ohmic Organic Semiconductor Contacts Using Self-Aligned Polyelectrolyte Counterion Monolayer

机译：使用自对准聚电解质抗衡离子单层对欧姆有机半导体触点进行界面掺杂

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摘要

Contact resistance limits the performance of organic field-effect transistors, especially those based on high-mobility semiconductors. Despite intensive research, the nature of this phenomenon is not well understood and mitigation strategies are largely limited to complex schemes often involving co-evaporated doped interlayers. Here, this study shows that solution self-assembly of a polyelectrolyte monolayer on a metal electrode can induce carrier doping at the contact of an organic semiconductor overlayer, which can be augmented by dopant ion-exchange in the monolayer, to provide ohmic contacts for both p-and n-type organic field-effect transistors. The resultant 2D-doped profile at the semiconductor interface is furthermore self-aligned to the contact and stabilized against counterion migration. This study shows that Coulomb potential disordering by the polyelectrolyte shifts the semiconductor density-of-states into the gap to promote extrinsic doping and cascade carrier injection. Contact resistivities of the order of 0.1-1 Omega cm(2) or less have been attained. This will likely also provide a platform for ohmic injection into other advanced semiconductors, including 2D and other nanomaterials.
机译：接触电阻限制了有机场效应晶体管的性能，特别是那些基于高迁移率半导体的场效应晶体管。尽管进行了深入研究，但这种现象的性质尚未得到很好的理解，缓解策略在很大程度上限于通常涉及共蒸发掺杂中间层的复杂方案。在这里，这项研究表明，金属电极上的聚电解质单层溶液的自组装可以在有机半导体覆盖层的接触处引起载流子掺杂，可以通过在单层中进行掺杂剂离子交换来增加载流子的掺杂，从而为两个电极提供欧姆接触p型和n型有机场效应晶体管。此外，在半导体界面处得到的2D掺杂轮廓将与接触自动对准，并稳定了抗衡离子迁移的能力。这项研究表明，由聚电解质引起的库仑电势无序将半导体的状态密度转移到间隙中，以促进非本征掺杂和级联载流子注入。接触电阻率达到0.1-1 Omega cm（2）或更小。这很可能还将为欧姆注入其他先进的半导体（包括2D和其他纳米材料）提供一个平台。

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  • 来源
    《Advanced Functional Materials》 |2017年第18期|1606291.1-1606291.9|共9页
  • 作者

    Seah Wei-Ling; Tang Cindy G.; Png Rui-Qi; Keerthi Venu; Zhao Chao; Guo Han; Yang Jin-Guo; Zhou Mi; Ho Peter K. H.; Chua Lay-Lay;

  • 作者单位

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    Natl Univ Singapore, Dept Chem, Lower Kent Ridge Rd, Singapore S117550, Singapore;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    Natl Univ Singapore, Dept Chem, Lower Kent Ridge Rd, Singapore S117550, Singapore;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    BASF SE, FET Syst, Carl Bosch Str 38, D-67056 Ludwigshafen, Germany;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore;

    Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore S117552, Singapore|Natl Univ Singapore, Dept Chem, Lower Kent Ridge Rd, Singapore S117550, Singapore;

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