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Two Regioisomeric pi-Conjugated Small Molecules: Synthesis, Photophysical, Packing, and Optoelectronic Properties

机译:两种区域异构的π共轭小分子:合成,光物理,堆积和光电性质

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Two regioisomeric D-1-A-D-A-D-1 type pi-conjugated molecules (1,4-bis{5-[4-(5-fluoro-7-(5-hexylthiophen-2-yl) benzo[c][1,2,5] thiadiazole)] thiophen-2-yl}-2,5-bis(hexyldecyloxy) benzene (Prox-FBT) and 1,4-bis{5-[4-(6-fluoro-7-(5-hexylthiophen-2-yl) benzo[c][1,2,5] thiadiazole)] thiophen- 2-yl}-2,5-bis(hexyldecyloxy) benzene (Dis-FBT)) are synthesized, by controlling the fluorine topology to be proximal or distal relative to the central core. The different F geometries are confirmed by the H-1-H-1 nuclear Over-hauer effect spectroscopy (NOESY). Clearly different optical, electrochemical, and thermal transition behaviors are obtained, i.e., stronger absorption, deeper valance band (by approximate to 0.2 eV), and higher melting/recrystallization temperatures (by 7-20 degrees C) are observed for Dis-FBT. The different intermolecular packing and unit cell structures are also calculated for the two regioisomers, based on the powder X-ray diffraction and 2D grazing-incidence wide-angle X-ray diffraction measurements. A tighter pi-pi packing with a preferential monoclinic face-on orientation is extracted for Dis-FBT, compared to Prox-FBT with bimodal orientations. Different topological structures significantly affect the electrical and photovoltaic properties, where Prox-FBT shows higher parallel hole mobility (2.3 x 10(-3) cm(2) V-1 s(-1)), but Dis-FBT demonstrates higher power conversion efficiency (5.47%) with a larger open-circuit voltage of 0.95 V (vs 0.79 V for Prox-FBT). The findings suggest that small changes in the topological geometry can affect the electronic structure as well as self-assembly behaviors, which can possibly be utilized for fine-adjusting the electrical properties and further optimization of optoelectronic devices.
机译:两个区域异构D-1-ADAD-1型π共轭分子(1,4-双{5- [4-(5-氟-7-(5-己基噻吩-2-基)苯并[c] [1,2 ,5]噻二唑)]噻吩-2-基} -2,5-双(己基癸氧基)苯(Prox-FBT)和1,4-双{5- [4-(6-氟-7-(5-己基噻吩)通过控制氟的拓扑结构以合成-2-基)苯并[c] [1,2,5]噻二唑)噻吩-2-基} -2,5-双(己基癸氧基)苯(Dis-FBT))。相对于中心核位于近端或远端。 H-1-H-1核哈夫(Hover-Hauer)效应光谱(NOESY)证实了不同的F几何形状。对于Dis-FBT,获得了明显不同的光学,电化学和热转变行为,即观察到更强的吸收,更强的价带(约0.2 eV)和更高的熔融/重结晶温度(7-20摄氏度)。还基于粉末X射线衍射和2D掠入射广角X射线衍射测量结果,计算了两种区域异构体的不同分子间堆积和晶胞结构。与具有双峰取向的Prox-FBT相比,Dis-FBT提取了具有优先单斜面朝上取向的更紧密的pi-pi填料。不同的拓扑结构会显着影响电和光伏特性,其中Prox-FBT显示出更高的平行孔迁移率(2.3 x 10(-3)cm(2)V-1 s(-1)),而Dis-FBT显示出更高的功率转换更高的开路电压0.95 V(Prox-FBT为0.79 V)时效率(5.47%)。这些发现表明,拓扑几何形状的微小变化会影响电子结构以及自组装行为,这有可能被用于微调电学性能和进一步优化光电器件。

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