High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes

Alsaif Manal M. Y. A.; Chrimes Adam F.; Daeneke Torben; Balendhran Sivacarendran; Bellisario Darin O.; Son Youngwoo; Field Matthew R.; Zhang Wei; Nili Hussein; Nguyen Emily P.; Latham Kay; van Embden Joel; Strano Michael S.; Ou Jian Zhen; Kalantar-zadeh Kourosh

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High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes

机译：使用二维氧化钼纳米薄片的电子墨水的高性能场效应晶体管

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Planar 2D materials are possibly the ideal channel candidates for future field effect transistors (FETs), due to their unique electronic properties. However, the performance of FETs based on 2D materials is yet to exceed those of conventional silicon based devices. Here, a 2D channel thin film made from liquid phase exfoliated molybdenum oxide nanoflake inks with highly controllable substoichiometric levels is presented. The ability to induce oxygen vacancies by solar light irradiation in an aqueous environment allows the tuning of electronic properties in 2D substoichiometric molybdenum oxides (MoO3-x). The highest mobility is found to be approximate to 600 cm(2) V-1 s(-1) with an estimated free electron concentration of approximate to 1.6 x 10(21) cm(-3) and an optimal I-On/I-Off ratio of >10(5) for the FETs made of 2D flakes irradiated for 30 min (x = 0.042). These values are significant and represent a real opportunity to realize the next generation of tunable electronic devices using electronic inks.

机译：平面2D材料由于其独特的电子特性，可能是未来场效应晶体管（FET）的理想沟道候选材料。但是，基于2D材料的FET的性能尚未超过传统的基于硅的器件。在这里，提出了一种二维通道薄膜，该薄膜由具有高度可控的亚化学计量水平的液相剥落的氧化钼纳米片状油墨制成。通过在水性环境中通过太阳光照射诱导氧空位的能力，可以调节2D亚化学计量的氧化钼（MoO3-x）中的电子性能。发现最高迁移率约为600 cm（2）V-1 s（-1），估计的自由电子浓度约为1.6 x 10（21）cm（-3）且具有最佳I-On / I对于30分钟（x = 0.042）的2D薄片制成的FET，截止比> 10（5）。这些值很重要，代表了使用电子墨水实现下一代可调谐电子设备的真正机会。

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《Advanced Functional Materials》 |2016年第1期|91-100|共10页
作者
Alsaif Manal M. Y. A.; Chrimes Adam F.; Daeneke Torben; Balendhran Sivacarendran; Bellisario Darin O.; Son Youngwoo; Field Matthew R.; Zhang Wei; Nili Hussein; Nguyen Emily P.; Latham Kay; van Embden Joel; Strano Michael S.; Ou Jian Zhen; Kalantar-zadeh Kourosh;
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RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Funct Mat & Microsyst Res Grp, Melbourne, Vic 3001, Australia;

MIT, Dept Chem Engn, Cambridge, MA 02139 USA;

MIT, Dept Chem Engn, Cambridge, MA 02139 USA;

RMIT Univ, RMIT Microscopy & Microanal Facil, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Funct Mat & Microsyst Res Grp, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia|CSIRO, Mfg Flagship, Clayton, Vic 3168, Australia;

MIT, Dept Chem Engn, Cambridge, MA 02139 USA;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia;

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4. Ink-Jet Printing of Self-Aligned Soluble-Pentacene Crystals for High-Performance Organic Field-Effect Transistors [C] . Jung Ah Lim, Wi Hyoung Lee, Yeong Don Park, Organic Field-Effect Transistors VI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6658 . 2007

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7. Electronic and optical properties of two dimensional Molybdenum Oxide Nanoflakes [O] . Alsaif M 2016

机译：二维氧化钼纳米薄片的电子和光学性质

High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes

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