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High-Performance Flexible Multilayer MoS2 Transistors on Solution-Based Polyimide Substrates

机译：基于溶液的聚酰亚胺衬底上的高性能柔性多层MoS2晶体管

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摘要

Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS2), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution-based polyimide (PI) flexible substrate in which laser-welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS2. Transistors fabricated according to this process scheme have decent properties: a field-effect-mobility as high as 141 cm(2) V-1 s(-1) and an I-on/I-off ratio as high as 5 x 10(5). Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.
机译：由于其相对较高的载流子迁移率，宽的带隙和机械柔韧性，分子厚度的过渡金属二硫化碳（TMDs）层，特别是二硫化钼（MoS2），作为机械柔性/可拉伸电子器件的活性元件，变得越来越重要。尽管通常将TMD晶体管的卓越电子性能集成到刚性硅晶片或玻璃基板中，但要在柔性基板上实现类似的器件性能仍然是一个很大的挑战。本工作通过一种新颖的工艺体系结构成功解决了这一挑战，该体系结构包括：基于溶液的聚酰亚胺（PI）柔性基板（其中嵌入了激光焊接的银纳米线），有机/无机混合栅极绝缘体以及MoS2多层。根据此工艺方案制造的晶体管具有良好的性能：场效应迁移率高达141 cm（2）V-1 s（-1），I-on / I-off比高达5 x 10（ 5）。此外，在系统半径为10和5 mm的循环弯曲试验中，没有观察到器件性能的明显降低。总体的电气和机械结果在制造柔性集成电路的通用区域方面提供了潜在的重要应用。

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  • 来源
    《Advanced Functional Materials》 |2016年第15期|2426-2434|共9页
  • 作者

    Song Won Geun; Kwon Hyuk-Jun; Park Jozeph; Yeo Junyeob; Kim Minjeong; Park Suntak; Yun Sungryul; Kyung Ki-Uk; Grigoropoulos Costas P.; Kim Sunkook; Hong Young Ki;

  • 作者单位

    Kyung Hee Univ, Multifunct Nano Bio Elect Lab, Gyeonggi 446701, South Korea;

    Univ Calif Berkeley, Laser Thermal Lab, Dept Mech Engn, Berkeley, CA 94720 USA;

    Kyung Hee Univ, Multifunct Nano Bio Elect Lab, Gyeonggi 446701, South Korea|Samsung Display Inc, Yongin 446920, South Korea;

    Univ Calif Berkeley, Laser Thermal Lab, Dept Mech Engn, Berkeley, CA 94720 USA;

    Kyung Hee Univ, Multifunct Nano Bio Elect Lab, Gyeonggi 446701, South Korea;

    Elect & Telecommun Res Inst, Transparent Transducer & UX Creat Res Ctr, Daejeon 305700, South Korea;

    Elect & Telecommun Res Inst, Transparent Transducer & UX Creat Res Ctr, Daejeon 305700, South Korea;

    Elect & Telecommun Res Inst, Transparent Transducer & UX Creat Res Ctr, Daejeon 305700, South Korea;

    Univ Calif Berkeley, Laser Thermal Lab, Dept Mech Engn, Berkeley, CA 94720 USA;

    Kyung Hee Univ, Multifunct Nano Bio Elect Lab, Gyeonggi 446701, South Korea;

    Kyung Hee Univ, Multifunct Nano Bio Elect Lab, Gyeonggi 446701, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    flexible electronics; MoS2; thin-film transistors; transition metal dichalcogenide;

    机译：柔性电子器件;MoS2;薄膜晶体管;过渡金属二卤化钨;

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