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CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes

机译:用于照明和显示的CsPbX3量子点:室温合成,光致发光优势,潜在的起源和白色发光二极管

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摘要

Recently, Kovalenko and co-workers and Li and co-workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low-threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room-temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self-passivation effect, and CsPbX3@X quantum-well band alignment are proposed to guarantee the excitons generation and high-rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light-emitting diodes with tunable color temperature and wide color gamut.
机译:最近,科瓦连科和他的同事以及李和同事开发了CsPbX3(X = Cl,Br,I)无机钙钛矿量子点(IPQDs),其表现出超高光致发光(PL)量子产率(QYs),低阈值激光发射,和多色电致发光。然而,通常的合成需要高温,惰性气体保护和局部注入操作,这严重地不利于应用。而且,如此高的QY令人非常困惑。在这里,首次报告了IPQD的室温(RT)合成,优异的PL,照明和显示的潜在来源以及潜在的可能性。合成是根据过饱和重结晶(SR)设计的,该反应在室温下于几秒钟内在室温下进行,没有惰性气体和注入操作。尽管是在RT上形成的,但IPQD的PL对红,绿和蓝发射的QY分别为80%,95%,70%和FWHM为35、20和18 nm。关于起源,提出了观察到的40 meV激子结合能,卤素自钝化效应和CsPbX3 @ X量子阱能带排列,以保证激子在RT下的产生和高速率的辐射重组。而且,这种优异的光学性能使它们在照明和显示方面具有广阔的前景,这主要由色温可调且色域宽的白光发光二极管证明。

著录项

  • 来源
    《Advanced Functional Materials》 |2016年第15期|2435-2445|共11页
  • 作者单位

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China|Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China;

    Nanjing Univ Sci & Technol, Inst Optoelect & Nanomat, Jiangsu Key Lab Adv Micro & Nano Mat & Technol, Coll Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China|Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Jiangsu, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    light-emitting diode (LED); perovskite; CsPbX3 (X = Cl, Br, I); photoluminescence; quantum dot (QD);

    机译:发光二极管;钙钛矿;CsPbX3(X = Cl;Br;I);光致发光;量子点(QD);

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