Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

Solmaz Alim; Huijben Mark; Koster Gertjan; Egoavil Ricardo; Gauquelin Nicolas; Van Tendeloo Gustaaf; Verbeeck Jo; Noheda Beatriz; Rijnders Guus

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Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

机译：BiFeO3薄膜中基体选择性修饰对区域选择性的影响

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Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71 degrees and 109 degrees, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.

机译：铁电畴的形成是铁电薄膜的基本特征。可以根据生长条件来操纵这些畴和畴壁。在菱形BiFeO3薄膜中，畴的顺序和特定类型的畴壁的存在在获得独特的铁电和磁性方面起着至关重要的作用。在该研究中，提出了BiFeO 3膜中畴的受控排序，并提出了通过修饰衬底端接而在两种类型的畴壁之间的受控选择性，即71度和109度。在两种不同的基底（即SrTiO3和TbScO3）上进行的实验强烈表明，畴的选择性取决于初始BiFeO3层的生长动力学。

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《Advanced Functional Materials》 |2016年第17期|2882-2889|共8页
作者
Solmaz Alim; Huijben Mark; Koster Gertjan; Egoavil Ricardo; Gauquelin Nicolas; Van Tendeloo Gustaaf; Verbeeck Jo; Noheda Beatriz; Rijnders Guus;
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Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands;

Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands;

Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands;

Univ Antwerp, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

Univ Antwerp, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

Univ Antwerp, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

Univ Antwerp, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands;

Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands;

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1. Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 substrate [J] . Zuhuang Chen Lu You Chuanwei Huang Yajun Qi Junling Wang Thirumany Sritharan and Lang Chen Applied Physics Letteres . 2010,第25期

机译：LaSrAlO4衬底上的应变外延BiFeO3薄膜中的纳米域。
2. Multiferroic properties and ferroelectric domain structures of Yb-doped BiFeO3 thin films on glass substrates [J] . Ahn Yoonho, Son Jong Yeog Physica, B. Condensed Matter . 2019,第期

机译：玻璃基材Yb掺杂BifeO3薄膜的多体性特性和铁电畴结构
3. Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates [J] . Ahn Yoonho, Seo Jeongdae, Lim Daeyoung, Current applied physics: the official journal of the Korean Physical Society . 2015,第5期

机译：玻璃基材上多晶BIFEO3薄膜的铁电畴结构和偏振切换特性
4. MOCVD OF TIO_2 THIN FILMS ON OTS MODIFIED SI(100) SUBSTRATES BY MICRO-CONTACT PRINTING (μCP): SELECTIVE GROWTH AND NEW CHARACTERIZATION TECHNIQUE WITH MICRO-RAMAN SPECTROSCOPY [C] . B.-C. Kang, J.-H. Lee, D.-Y. Jung, Proceedings vol.2005-09; European Conference on Chemical Vapor Deposition(EURCVD-15); 20050905-09; Bochum(DE) . 2005

机译：微接触印刷（μCP）在OTS修饰的SI（100）衬底上对TIO_2薄膜的MOCVD：微拉曼光谱法的选择性生长和新表征技术
5. Atomic-scale Polarization Structures and Domain Dynamics in BiFeO3 Thin Films. [D] . Li, Linze. 2017

机译：BiFeO3薄膜中的原子尺度极化结构和畴动力学。
6. Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate [O] . Yogesh Sharma, Radhe Agarwal, Charudatta Phatak, -1

机译：（100）NdGaO3衬底上外延（110）BiFeO3薄膜中的远距离条纹纳米域
7. Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 Substrate [O] . Chen, Zuhuang, You, Lu, Huang, Chuanwei, 2011

机译：LasralO4中应变外延BiFeO3薄膜中的纳米级畴基质
8. Ferroelectric Domain Scaling and Switching in Ultrathin BiFeO3 Films Deposited on Vicinal Substrates. [R] . A. Baddorf D. Mazumdar S. Jesse S. Kalinin V. Shelke 2012

机译：超临界BiFeO3薄膜的铁电畴缩放和切换沉积在邻近基板上。

Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

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