• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices
【24h】

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

机译：柔性透明电子设备中非晶态金属氧化物半导体的离子液体活化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. This study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.
机译：非晶态金属氧化物半导体具有高性能，透明，柔性电子设备所需的高载流子迁移率和出色的大面积均匀性。然而，其广泛实施的关键瓶颈是需要在与柔性聚合物基底不相容的高温下活化这些材料。报道了在室温下使用离子液体门控对非晶铟镓锌氧化物半导体通道的高度可控的活化。活化是由电场引起的氧在离子液体-半导体界面上的迁移来控制的。除了激活未退火的器件外，还显示出可以在增强和耗尽模式之间线性调整晶体管的阈值电压。最后，展示了使用这种简单技术在聚酰胺基板上制作的透明柔性薄膜金属氧化物晶体管的第一个示例。这项研究表明，场致激活有潜力替代传统的后沉积热退火，这有望为柔性电子应用中的大规模实施打开大门。

著录项

  • 来源
    《Advanced Functional Materials》 |2016年第17期|2820-2825|共6页
  • 作者

    Pudasaini Pushpa Raj; Noh Joo Hyon; Wong Anthony T.; Ovchinnikova Olga S.; Haglund Amanda V.; Dai Sheng; Ward Thomas Zac; Mandrus David; Rack Philip D.;

  • 作者单位

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA;

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA;

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA;

    Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37931 USA|Oak Ridge Natl Lab, Inst Funct Imaging Mat, Oak Ridge, TN 37931 USA;

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA;

    Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA;

    Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA;

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA|Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA;

    Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA|Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号