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首页> 外文期刊>Advanced Functional Materials >Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping
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Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping

机译：通过厚度调制和MoO3层掺杂来控制WSe2场效应晶体管的载流子类型

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摘要

Control of the carrier type in 2D materials is critical for realizing complementary logic computation. Carrier type control in WSe2 field-effect transistors (FETs) is presented via thickness engineering and solid-state oxide doping, which are compatible with state-of-the-art integrated circuit (IC) processing. It is found that the carrier type of WSe2 FETs evolves with its thickness, namely, p-type (<4 nm), ambipolar (approximate to 6 nm), and n-type (> 15 nm). This layer-dependent carrier type can be understood as a result of drastic change of the band edge of WSe2 as a function of the thickness and their band offsets to the metal contacts. The strong carrier type tuning by solid-state oxide doping is also demonstrated, in which ambipolar characteristics of WSe 2 FETs are converted into pure p-type, and the field-effect hole mobility is enhanced by two orders of magnitude. The studies not only provide IC-compatible processing method to control the carrier type in 2D semiconductor, but also enable to build functional devices, such as, a tunable diode formed with an asymmetrical-thick WSe2 flake for fast photodetectors.
机译：2D材料中载体类型的控制对于实现互补逻辑计算至关重要。 WSe2场效应晶体管（FET）中的载流子类型控制是通过厚度工程和固态氧化物掺杂来实现的，这与最新的集成电路（IC）处理兼容。发现WSe2 FET的载流子类型随其厚度而发展，即p型（<4 nm），双极性（约6 nm）和n型（> 15 nm）。取决于层的载流子类型可以理解为WSe2的能带边缘随厚度及其与金属触点之间的能带偏移的急剧变化的结果。还展示了通过固态氧化物掺杂进行的强载流子类型调谐，其中将WSe 2 FET的双极性特性转换为纯p型，并且场效应空穴迁移率提高了两个数量级。这些研究不仅提供了与IC兼容的处理方法来控制2D半导体中的载流子类型，而且使它们能够构建功能器件，例如由不对称厚度的WSe2薄片形成的可调二极管，用于快速光电探测器。

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  • 来源
    《Advanced Functional Materials》 |2016年第23期|4223-4230|共8页
  • 作者

    Zhou Changjian; Zhao Yuda; Raju Salahuddin; Wang Yi; Lin Ziyuan; Chan Mansun; Chai Yang;

  • 作者单位

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China|Hong Kong Polytech Univ, Shenzhen Res Inst, Shen Zhen 518057, Peoples R China;

    Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China|Hong Kong Polytech Univ, Shenzhen Res Inst, Shen Zhen 518057, Peoples R China;

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