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Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

机译：HfO2基铁电电容器场循环行为背后的物理机制

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摘要

Novel hafnium oxide (HfO2)-based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to perovskite-based ferroelectrics that are currently used in nonvolatile ferroelectric random access memories (FeRAMs). Within the lifetime of the device, two main regimes of wake-up and fatigue can be identified. Up to now, the mechanisms behind these two device stages have not been revealed. Thus, the main scope of this study is an identification of the root cause for the increase of the remnant polarization during the wake-up phase and subsequent polarization degradation with further cycling. Combining the comprehensive ferroelectric switching current experiments, Preisach density analysis, and transmission electron microscopy (TEM) study with compact and Technology Computer Aided Design (TCAD) modeling, it has been found out that during the wake-up of the device no new defects are generated but the existing defects redistribute within the device. Furthermore, vacancy diffusion has been identified as the main cause for the phase transformation and consequent increase of the remnant polarization. Utilizing trap density spectroscopy for examining defect evolution with cycling of the device together with modeling of the degradation results in an understanding of the main mechanisms behind the evolution of the ferroelectric response.
机译：与目前用于非易失性铁电随机存取存储器（FeRAM）的基于钙钛矿的铁电相比，新型的基于氧化oxide（HfO2）的铁电具有完全的可扩展性和互补金属氧化物半导体的可集成性。在设备的使用寿命内，可以识别出两种主要的唤醒和疲劳状态。到目前为止，这两个设备阶段背后的机制尚未公开。因此，本研究的主要范围是确定唤醒阶段残余极化增加以及随后的极化进一步循环的根本原因。将全面的铁电开关电流实验，Preisach密度分析和透射电子显微镜（TEM）研究与紧凑型和技术计算机辅助设计（TCAD）建模相结合，发现在器件唤醒期间没有新的缺陷产生但现有缺陷在设备内重新分布。此外，空位扩散已被识别为相变并因此增加了剩余极化的主要原因。利用陷阱密度光谱法通过器件的循环检查缺陷的演变以及退化的模型，可以了解铁电响应演变背后的主要机理。

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  • 来源
    《Advanced Functional Materials》 |2016年第25期|4601-4612|共12页
  • 作者

    Pesic Milan; Fengler Franz Paul Gustav; Larcher Luca; Padovani Andrea; Schenk Tony; Grimley Everett D.; Sang Xiahan; LeBeau James M.; Slesazeck Stefan; Schroeder Uwe; Mikolajick Thomas;

  • 作者单位

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

    Univ Modena & Reggio Emilia, DISMI, Via Amendola 2, I-42122 Reggio, Emilia, Italy;

    Univ Modena & Reggio Emilia, DISMI, Via Amendola 2, I-42122 Reggio, Emilia, Italy;

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

    North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA;

    North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA;

    North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA;

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

    Tech Univ Dresden, NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany;

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  • 正文语种 eng
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  • 关键词

    FeCAP; ferroelectric HfO2; modeling; phase-change;

    机译：FeCAP铁电HfO2建模相变;

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