Epitaxy of Layered Orthorhombic SnS-SnSxSe(1-x) Core-Shell Heterostructures with Anisotropic Photoresponse

Xia Jing; Zhu Dandan; Li Xuanze; Wang Lei; Tian Lifeng; Li Jing; Wang Jingyuan; Huang Xing; Meng Xiang-Min

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Epitaxy of Layered Orthorhombic SnS-SnSxSe(1-x) Core-Shell Heterostructures with Anisotropic Photoresponse

机译：具有各向异性光响应的层状正交SnS-SnSxSe（1-x）核-壳异质结构的外延

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Vertical and in-plane heterostructures based on van der Waals (vdW) crystals have drawn rapidly increasing attention owning to the extraordinary properties and significant application potential. However, current heterostructures are mainly limited to vdW crystals with a symmetrical hexagonal lattice, and the heterostructures made by asymmetric vdW crystals are rarely investigated at the moment. In this contribution, it is reported for the first time the synthesis of layered orthorhombic SnS-SnSxSe(1-x) core-shell heterostructures with well-defined geometry via a two-step thermal evaporation method. Structural characterization reveals that the heterostructures of SnS-SnSxSe(1-x) are in-plane interconnected and vertically stacked, constructed by SnSxSe(1-x) shell heteroepitaxially growing on/around the pre-synthesized SnS flake with an epitaxial relationship of (303)(SnS)//(033)(SnSxSe(1-x)), [010](SnS)//[100](SnSxSe(1-x)). On the basis of detailed morphology, structure and composition characterizations, a growth mechanism involving heteroepitaxial growth, atomic diffusion, as well as thermal thinning is proposed to illustrate the formation process of the heterostructures. In addition, a strong polarization-dependent photoresponse is found on the device fabricated using the as-prepared SnS-SnSxSe(1-x) core-shell heterostructure, enabling the potential use of the heterostructures as functional components for optoelectronic devices featured with anisotropy.

机译：基于范德华（vdW）晶体的垂直和平面内异质结构因其非凡的性能和巨大的应用潜力而迅速引起人们的关注。但是，目前的异质结构主要限于具有对称六边形晶格的vdW晶体，目前很少研究由不对称vdW晶体制成的异质结构。在此贡献中，首次报道了通过两步热蒸发法合成具有明确定义的几何形状的正交各向异性层状SnS-SnSxSe（1-x）核-壳异质结构。结构表征表明，SnS-SnSxSe（1-x）的异质结构是平面内互连并垂直堆叠的，由外延生长在预合成SnS薄片上/周围的SnSxSe（1-x）壳异质外延生长而成，外延关系为（ 303）（SnS）//（033）（SnSxSe（1-x）），[010]（SnS）// [100]（SnSxSe（1-x））。在详细的形貌，结构和组成特征的基础上，提出了一种涉及异质外延生长，原子扩散以及热稀化的生长机理，以说明异质结构的形成过程。此外，在使用准备好的SnS-SnSxSe（1-x）核-壳异质结构制造的器件上发现了强烈的偏振依赖性光响应，从而使得该异质结构有可能用作具有各向异性的光电子器件的功能组件。

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《Advanced Functional Materials》 |2016年第26期|4673-4679|共7页
作者
Xia Jing; Zhu Dandan; Li Xuanze; Wang Lei; Tian Lifeng; Li Jing; Wang Jingyuan; Huang Xing; Meng Xiang-Min;
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Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

Max Planck Gesell, Fritz Haber Inst, Inorgan Dept, Faradayweg 4-6, D-14195 Berlin, Germany;

Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;

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机译：原位液相外延：合成异质结构核壳复合材料的另一种策略。
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机译：具有各向异性光响应的层状正交性SNS-SNSXSE（1-x）核心壳异质结构的淫秽
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机译：aLE（原子层外延）和mBE（分子束外延）方法在层状Hg（1-x）Cd（x）Te薄膜生长中的应用

Epitaxy of Layered Orthorhombic SnS-SnSxSe(1-x) Core-Shell Heterostructures with Anisotropic Photoresponse

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