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MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors

机译：用于集成WSe2和MoS2场效应晶体管的MXene电极

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摘要

Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have attracted wide attention because of their excellent conductivities. Here, the electrode applications of Ti2C(OH)(x)F-y, one member of the MXene family, in WSe2 and MoS2 field effect transistors (FETs) are assessed. Kelvin probe force microscopy analysis is performed to determine its work function, which is estimated to be approximate to 4.98 eV. Devices based on WSe2/Ti2C(OH)(x)F-y and MoS2/Ti2C(OH)(x)F-y heterostructures are fabricated with the mechanical transfer method and their electronic performances evaluated. The temperature-dependent current-voltage transfer characteristics of the devices are determined to extract their Schottky barrier heights. The hole barrier between WSe2 and Ti-2 C(OH)(x)F-y is estimated to be approximate to 0.23 eV and the electron barrier between the MoS2 band and Ti2C(OH)(x)F-y is approximate to 0.19 eV, which indicates that the pinning effect occurs at the MoS2/Ti2C(OH)(x)F-y interface but not at the WSe2/Ti2C(OH)(x)F-y interface; this difference arises because of the difference between the band structures of WSe2 and MoS2. A complementary metal-oxide-semiconductor inverter based on these electrode properties of Ti2C(OH)(x)F-y with MoS2 (n-channel) and WSe2 (p-channel) is fabricated, which demonstrates that Ti2C(OH)(x)F-y is a promising electrode for future nanoelectronics applications.
机译：最近，作为2D早期过渡金属碳化物和碳氮化物的MXene由于其出色的导电性而受到了广泛的关注。此处，评估了MXene家族之一的Ti2C（OH）（x）F-y在WSe2和MoS2场效应晶体管（FET）中的电极应用。进行开尔文探针力显微镜分析以确定其功函数，估计其功函数约为4.98 eV。利用机械转移方法制造了基于WSe2 / Ti2C（OH）（x）F-y和MoS2 / Ti2C（OH）（x）F-y异质结构的器件，并评估了其电子性能。确定器件的温度相关电流-电压传递特性，以提取其肖特基势垒高度。 WSe2与Ti-2 C（OH）（x）Fy之间的空穴势垒估计约为0.23 eV，MoS2能带与Ti2C（OH）（x）Fy之间的电子势垒约为0.19 eV，这表明钉扎效应发生在MoS2 / Ti2C（OH）（x）Fy界面处，而不发生在WSe2 / Ti2C（OH）（x）Fy界面处；这种差异是由于WSe2和MoS2的能带结构之间的差异而引起的。基于具有MoS2（n通道）和WSe2（p通道）的Ti2C（OH）（x）Fy的这些电极特性的互补金属氧化物半导体逆变器的制造，表明Ti2C（OH）（x）Fy是未来纳米电子应用的有希望的电极。

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  • 来源
    《Advanced Functional Materials》 |2016年第29期|5328-5334|共7页
  • 作者

    Xu Jiao; Shim Jaewoo; Park Jin-Hong; Lee Sungjoo;

  • 作者单位

    SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea;

    Sungkyunkwan Univ SKKU, Sch Elect & Elect Engn, Suwon 440746, South Korea;

    Sungkyunkwan Univ SKKU, Sch Elect & Elect Engn, Suwon 440746, South Korea;

    SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea|Sungkyunkwan Univ SKKU, Sch Elect & Elect Engn, Suwon 440746, South Korea|Sungkyunkwan Univ SKKU, Ctr Human Interface Nanotechnol HINT, Suwon 440746, South Korea;

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