• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors
【24h】

Coulomb Enhanced Charge Transport in Semicrystalline Polymer Semiconductors

机译：库仑增强了半结晶聚合物半导体中的电荷传输

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Polymer semiconductors provide unique possibilities and flexibility in tailoring their optoelectronic properties to match specific application demands. The recent development of semicrystalline polymers with strongly improved charge transport properties forces a review of the current understanding of the charge transport mechanisms and how they relate to the polymer's chemical and structural properties. Here, the charge density dependence of field effect mobility in semicrystalline polymer semiconductors is studied. A simultaneous increase in mobility and its charge density dependence, directly correlated to the increase in average crystallite size of the polymer film, is observed. Further evidence from charge accumulation spectroscopy shows that charges accumulate in the crystalline regions of the polymer film and that the increase in crystallite size affects the average electronic orbitals delocalization. These results clearly point to an effect that is not caused by energetic disorder. It is instead shown that the inclusion of short range coulomb repulsion between charge carriers on nanoscale crystalline domains allows describing the observed mobility dependence in agreement with the structural and optical characterization. The conclusions that are extracted extend beyond pure transistor characterization and can provide new insights into charge carrier transport for regimes and timescales that are relevant to other optoelectronic devices.
机译：聚合物半导体在调整其光电子特性以适应特定应用需求方面提供了独特的可能性和灵活性。具有显着改善的电荷传输性质的半结晶聚合物的最新发展迫使人们回顾当前对电荷传输机理的理解以及它们与聚合物的化学和结构性质之间的关系。在此，研究了半结晶聚合物半导体中场效应迁移率的电荷密度依赖性。观察到迁移率及其电荷密度依赖性的同时增加，其与聚合物膜的平均微晶尺寸的增加直接相关。电荷积累光谱学的进一步证据表明，电荷积累在聚合物膜的晶体区域中，微晶尺寸的增加会影响平均电子轨道离域。这些结果清楚地表明不是由精神错乱引起的效果。相反，表明在纳米级晶域上的电荷载流子之间包含短距离库仑排斥力，可以描述观察到的迁移率依赖性，并与结构和光学特征一致。得出的结论超出了纯晶体管特性的范围，可以为与其他光电器件相关的状态和时标提供电荷载流子传输的新见解。

著录项

  • 来源
    《Advanced Functional Materials》 |2016年第44期|8011-8022|共12页
  • 作者

    Di Pietro Riccardo; Nasrallah Iyad; Carpenter Joshua; Gann Eliot; Koelln Lisa Sophie; Thomsen Lars; Venkateshvaran Deepak; OHara Kathryn; Sadhanala Aditya; Chabinyc Michael; McNeill Christopher R.; Facchetti Antonio; Ade Harald; Sirringhaus Henning; Neher Dieter;

  • 作者单位

    Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    North Carolina State Univ, Dept Phys, 2401 Stinson Dr, Raleigh, NC 27695 USA;

    Monash Univ, Dept Mat Engn, Wellington Rd, Clayton, Vic 3800, Australia|Australian Synchrotron, 800 Blackburn Rd, Clayton, Vic 3168, Australia;

    Univ Potsdam, Inst Phys & Astron, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany;

    Australian Synchrotron, 800 Blackburn Rd, Clayton, Vic 3168, Australia;

    Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;

    Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA;

    Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA;

    Monash Univ, Dept Mat Engn, Wellington Rd, Clayton, Vic 3800, Australia;

    Polyera Corp, 8045 Lamon Ave,STE 140, Skokie, IL 60077 USA;

    North Carolina State Univ, Dept Phys, 2401 Stinson Dr, Raleigh, NC 27695 USA;

    Univ Potsdam, Inst Phys & Astron, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号