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Single-Layer MoS2 Nanosheets with Amplified Photoacoustic Effect for Highly Sensitive Photoacoustic Imaging of Orthotopic Brain Tumors

机译:单层MoS2纳米片具有增强的光声效应,用于原位脑肿瘤的高灵敏度光声成像。

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摘要

Photoacoustic (PA) imaging, as a fast growing technology that combines the high contrast of light and large penetration depth of ultrasound, has demonstrated great potential for molecular imaging of cancer. However, PA molecular imaging of orthotopic brain tumors is still challenging, partially due to the limited options and insufficient sensitivity of available PA molecular probes. Here, the direct formation of single-layer (S-MoS2), few-layer (F-MoS2), and multi-layer (M-MoS2) nanosheets by the albumin-assisted exfoliation without further surface modifications is reported. It is demonstrated that the PA effect of the MoS2 nanosheets is highly dependent on their layered nanostructures. Decreasing the number of nanosheet layers from M-MoS2 to S-MoS2 can both significantly enhance the near-infrared light absorption and improve the elastic properties of the nanomaterial, resulting in greatly amplified PA effect. The in vitro experiments demonstrate that the prepared S-MoS2 with excellent biocompatibility can be efficiently internalized into U87 glioma cells, producing strong PA signals for highly sensitive detection of brain tumor cells, with a detection limit of approximate to 100 cells. Intravenous administration of S-MoS2 to both U87 subcutaneous and orthotopic tumor-bearing mice shows highly efficient tumor retention and significantly enhanced PA contrast. Tumor tissue approximate to 1.5 mm below the skull can still be clearly visualized in vivo. Previous studies suggest that the fabricated S-MoS2 with amplified PA effect have high potential to serve as an efficient nanoplatform for sensitive PA molecular imaging and hold promising prospect for translational medicine.
机译:作为一种快速发展的技术,光声(PA)成像技术结合了光的高对比度和超大的超声穿透深度,已显示出对癌症分子成像的巨大潜力。然而,原位脑肿瘤的PA分子成像仍然具有挑战性,部分原因是可用的PA分子探针的选择有限且灵敏度不足。在此,报道了通过白蛋白辅助剥离直接形成单层(S-MoS2),少层(F-MoS2)和多层(M-MoS2)纳米片,而没有进一步的表面修饰。结果表明,MoS2纳米片的PA效应高度依赖于它们的层状纳米结构。将纳米片层的数量从M-MoS2减少到S-MoS2既可以显着增强近红外光吸收,又可以改善纳米材料的弹性,从而大大增强了PA效应。体外实验表明,所制备的具有优异生物相容性的S-MoS2可以有效地内化到U87胶质瘤细胞中,产生强PA信号以高度敏感地检测脑肿瘤细胞,检测极限约为100个细胞。对U87皮下和原位荷瘤小鼠静脉注射S-MoS2均显示出高效的肿瘤保留能力,并显着增强了PA的对比度。仍可以在体内清晰地看到颅骨下方约1.5毫米的肿瘤组织。先前的研究表明,具有放大的PA效应的S-MoS2的制备具有很高的潜力,可以用作灵敏的PA分子成像的有效纳米平台,并为转化医学前景广阔。

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  • 来源
    《Advanced Functional Materials》 |2016年第47期|8715-8725|共11页
  • 作者单位

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China|BCMIIS, Beijing 100048, Peoples R China;

    Chinese Acad Sci, Paul C Lauterbur Res Ctr Biomed Imaging, Inst Biomed & Hlth Engn, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Paul C Lauterbur Res Ctr Biomed Imaging, Inst Biomed & Hlth Engn, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Res Lab Biomed Opt & Mol Imaging, Shenzhen Key Lab Mol Imaging, Inst Biomed & Hlth Engn,Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China|BCMIIS, Beijing 100048, Peoples R China;

    Chinese Acad Sci, Paul C Lauterbur Res Ctr Biomed Imaging, Inst Biomed & Hlth Engn, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

    Chinese Acad Sci, Paul C Lauterbur Res Ctr Biomed Imaging, Inst Biomed & Hlth Engn, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China;

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