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Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

机译：基于硅的电流控制可重构磁阻逻辑与非易失性存储器相结合

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摘要

Silicon-based complementary metal-oxide-semiconductor (CMOS) transistors have achieved great success. However, the traditional development pathway is approaching its fundamental limits. Magnetoelectronics logic, especially magnetic-field-based logic, shows promise for surpassing the development limits of CMOS logic and arouses profound attentions. Existing proposals of magnetic-field-based logic are based on exotic semiconductors and difficult for further technological implementation. Here, a kind of diode-assisted geometry-enhanced low-magnetic-field magnetoresistance (MR) mechanism is proposed. It couples p-n junction's nonlinear transport characteristic and Lorentz force by geometry, and shows extremely large low-magnetic-field MR (＞120% at 0.15 T). Further, it is applied to experimentally demonstrate current-controlled reconfigurable magnetoresistance logic on the silicon platform at room temperature. This logic device could perform all four basic Boolean logic including AND, OR, NAND and NOR in one device. Combined with non-volatile magnetic memory, this logic architecture with unique mag-netoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in silicon-based magnetoelectronics and offer a route to make a new kind of microprocessor with potential of high performance.
机译：硅基互补金属氧化物半导体（CMOS）晶体管取得了巨大的成功。但是，传统的发展道路正在接近其基本极限。磁电子逻辑，特别是基于磁场的逻辑，有望超越CMOS逻辑的发展极限，并引起人们的广泛关注。现有的基于磁场的逻辑的提议是基于奇异的半导体，并且难以进行进一步的技术实施。在此，提出了一种二极管辅助的几何增强低磁场磁阻（MR）机构。它通过几何形状耦合了p-n结的非线性传输特性和洛伦兹力，并显示出极大的低磁场MR（在0.15 T时> 120％）。此外，它还用于在室温下在硅平台上实验演示电流控制的可重构磁阻逻辑。该逻辑设备可以在一个设备中执行所有四个基本布尔逻辑，包括AND，OR，NAND和NOR。与非易失性磁存储器相结合，这种具有独特的磁电特性的逻辑体系结构具有电流控制的重新配置，零刷新消耗，即时接通性能的优势，并且可以弥合处理器内存的差距。我们的发现将为基于硅的磁电子学铺平道路，并为制造具有高性能潜力的新型微处理器提供一条途径。

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  • 来源
    《Advanced Functional Materials》 |2015年第1期|158-166|共9页
  • 作者

    Zhaochu Luo; Xiaozhong Zhang; Chengyue Xiong; Jiaojiao Chen;

  • 作者单位

    School of Materials Science and Engineering Tsinghua University Beijing 100084, China,Beijing National Center for Electron Microscopy Tsinghua University Beijing 100084, China;

    School of Materials Science and Engineering Tsinghua University Beijing 100084, China,Beijing National Center for Electron Microscopy Tsinghua University Beijing 100084, China;

    School of Materials Science and Engineering Tsinghua University Beijing 100084, China,Beijing National Center for Electron Microscopy Tsinghua University Beijing 100084, China;

    School of Materials Science and Engineering Tsinghua University Beijing 100084, China,Beijing National Center for Electron Microscopy Tsinghua University Beijing 100084, China;

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