• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Role of Side-Chain Branching on Thin-Film Structure and Electronic Properties of Polythiophenes
【24h】

Role of Side-Chain Branching on Thin-Film Structure and Electronic Properties of Polythiophenes

机译：侧链支化对聚噻吩薄膜结构和电子性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Side-chain engineering is increasingly being utilized as a technique to impact the structural order and enhance the electronic properties of semiconducting polymers. However, the correlations drawn between structural changes and the resulting charge transport properties are typically indirect and qualitative in nature. In the present work, a combination of grazing incidence X-ray diffraction and crystallographic refinement calculations is used to determine the precise molecular packing structure of two thiophene-based semiconducting polymers to study the impact of side-chain modifications. The optimized structures provide high-quality fits to the experimental data and demonstrate that in addition to a large difference in interchain spacing between the two materials, there exists a significant disparity in backbone orientation as well. The calculated structures are utilized in density functional theory calculations to determine the band structure of the two materials and are shown to exhibit a dramatic disparity in interchain dispersion which accounts for the large observed difference in charge carrier mobility. The techniques presented here are meant to be general and are therefore applicable to many other highly diffracting semicrystalline polymers.
机译：侧链工程越来越多地被用作一种影响结构顺序和增强半导体聚合物电子性能的技术。然而，结构变化与所产生的电荷传输性质之间的相关性通常本质上是间接的和定性的。在当前的工作中，放牧入射X射线衍射和晶体学细化计算的组合用于确定两种基于噻吩的半导体聚合物的精确分子堆积结构，以研究侧链修饰的影响。优化的结构为实验数据提供了高品质的拟合，并证明除了两种材料之间的链间间距存在较大差异外，主链取向方面也存在显着差异。所计算的结构在密度泛函理论计算中用于确定两种材料的能带结构，并且显示出在链间分散中显示出巨大的差异，这说明了所观察到的电荷载流子迁移率的巨大差异。这里介绍的技术是一般性的，因此适用于许多其他高衍射半结晶聚合物。

著录项

  • 来源
    《Advanced Functional Materials》 |2015年第17期|2616-2624|共9页
  • 作者

    Himmelberger Scott; Duong Duc T.; Northrup John E.; Rivnay Jonathan; Koch Felix P. V.; Beckingham Bryan S.; Stingelin Natalie; Segalman Rachel A.; Mannsfeld Stefan C. B.; Salleo Alberto;

  • 作者单位

    Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA;

    Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA;

    Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA;

    Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA;

    ETH, Dept Mat, CH-8093 Zurich, Switzerland;

    Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA;

    Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA|Univ Calif Berkeley, Dept Chem & Biomol Engn, Berkeley, CA 94720 USA;

    Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany;

    Stanford Univ, Mat Sci & Engn, Stanford, CA 94305 USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号