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首页> 外文期刊>Advanced Functional Materials >Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality
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Antimony Induced {112}A Faceted Triangular GaAs1-xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality

机译：锑诱导的{112} A多面三角形GaAs1-xSbx / InP核/壳纳米线及其增强的光学质量

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摘要

Mid-infrared GaAs1-xSbx/InP core/shell nanowires are grown coherently with perfectly twin-free zinc blende crystal structure. An unusual triangular InP shell with predominantly {112}A facets instead of {112}B facets is reported. It is found that this polarity preference is due to the surfactant role of Sb, which inhibits InP shell growth rate in the 112A directions. This behavior reveals a new degree of control and tunability allowed in manipulating nanowire facet geometry and polarity in radial heterostructures by a simple means. Tuning the Sb composition in the core yields controllable intense photoluminescence emission in both the 1.3 and 1.5 m optical telecommunication windows, up to room temperature for single nanowires. The internal quantum efficiency of the core/shell nanowires is experimentally determined to be as high as 56% at room temperature. Transient Rayleigh scattering analysis brings complementary information, revealing the photoexcited carrier lifetime in the core/shell nanowire to be approximate to 100 ps at 300 K and approximate to 800 ps at 10 K. In comparison, the carrier lifetime of core-only nanowire is below the detection limit of the system (25 ps). The demonstrated superior optical quality of the core/shell nanowires and their ideal emission wavelength range makes them highly relevant candidates for near-infrared optoelectronic applications.
机译：中红外GaAs1-xSbx / InP核/壳纳米线以完美的无孪晶锌共混物晶体结构相干生长。据报道，一个不寻常的三角形InP壳主要具有{112} A面，而不是{112} B面。发现该极性偏爱归因于Sb的表面活性剂作用，这抑制了InP壳在112A方向上的生长速率。这种行为揭示了通过一种简单的方法来操纵纳米线小平面的几何形状和径向异质结构中的极性所允许的新程度的控制和可调性。调整芯中的Sb成分可在1.3 m和1.5 m的光通信窗口中产生可控的强烈光致发光发射，对于单个纳米线，最高可达到室温。核/壳纳米线的内部量子效率在室温下被实验确定为高达56％。瞬态瑞利散射分析带来了补充信息，揭示了核/壳纳米线中光激发的载流子寿命在300 K时约为100 ps，在10 K时约为800 ps。相比之下，仅核纳米线的载流子寿命低于系统的检测极限（25 ps）。核/壳纳米线的出色光学质量及其理想的发射波长范围使其成为近红外光电子应用的高度相关候选者。

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  • 来源
    《Advanced Functional Materials》 |2015年第33期|5300-5308|共9页
  • 作者

    Yuan Xiaoming; Caroff Philippe; Wang Fan; Guo Yanan; Wang Yuda; Jackson Howard E.; Smith Leigh M.; Tan Hark Hoe; Jagadish Chennupati;

  • 作者单位

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA;

    Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA;

    Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

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  • 正文语种 eng
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  • 关键词

    III-V semiconductors; core; shell; MOVPE; nanowires; photoluminescence;

    机译：III-V半导体;核;壳;MOVPE;纳米线;光致发光;

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