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Resistive Switching in Mott Insulators and Correlated Systems

机译:Mott绝缘子和相关系统中的电阻开关

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摘要

Resistive random access memories (ReRAM) form an emerging type of non-volatile memories, based on an electrically driven resistive switching (RS) of an active material. This Feature Article focuses on a broad class of ReRAM where the active material is a Mott insulator or a correlated system. These materials can indeed undergo various insulator-to-metal transitions (IMT) in response to external perturbations such as electronic doping or temperature. These IMT explain most of resistive switching
机译:电阻随机存取存储器(ReRAM)基于活性材料的电驱动电阻开关(RS)形成了一种新兴的非易失性存储器。这篇专题文章重点介绍了ReRAM的广泛类别,其中活性材料是Mott绝缘体或相关系统。这些材料的确可以响应诸如电子掺杂或温度之类的外部干扰而经历各种绝缘体到金属的转变(IMT)。这些IMT解释了大多数电阻切换

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