Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3

Querre M.; Tranchant J.; Corraze B.; Cordier S.; Bouquet V.; Deputier S.; Guilloux-Viry M.; Besland M. -P.; Janod E.; Cario L.

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Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3

机译：MOTT绝缘体（V1-XCRX）（2）O-3中的非易失性电阻切换

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The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)(2)O-3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)(2)O-3. Our work demonstrates also reversible resistive switching in (V1-xCrx)(2)O-3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)(2)O-3.

机译：在与电场诱导的绝缘体与金属转换（IMT）相关的Mott绝缘体中的非易失性电阻切换的发现已经为其在一种新型的非易失性存储器中使用的方式铺平了方式。虽然以前的大多数研究致力于揭示电阻式切换机制并探索硫属元素化物Mott绝缘体的记忆力，我们在这里综合研究了规范氧化物莫特绝缘体（V1-XCRX）（2）O-3的电阻切换。我们的作品表明，该化合物在电场下进行了非易失性的电阻切换。该电阻切换由局部等级的Mott转变诱导，该局部刻度产生与（V1-XCRX）（2）O-3的温度 - 压力相图的现有相密切相关的金属域。我们的作品还演示了（V1-XCRX）（2）O-3晶体和薄膜装置的可逆电阻切换。在880nm厚层上获得的初步性能，具有500nm电极，显示基于Mott绝缘体（V1-XCRX）（2）O-3的Mott存储器的强势。

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《Physica, B. Condensed Matter》 |2018年第2018期|共4页
作者
Querre M.; Tranchant J.; Corraze B.; Cordier S.; Bouquet V.; Deputier S.; Guilloux-Viry M.; Besland M. -P.; Janod E.; Cario L.;
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作者单位

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

Univ Rennes 1 ISCR UMR CNRS 6226 F-35042 Rennes France;

Univ Rennes 1 ISCR UMR CNRS 6226 F-35042 Rennes France;

Univ Rennes 1 ISCR UMR CNRS 6226 F-35042 Rennes France;

Univ Rennes 1 ISCR UMR CNRS 6226 F-35042 Rennes France;

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

Univ Nantes Inst Mat Jean Rouxel IMN UMR CNRS 6502 F-44322 Nantes France;

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正文语种 eng
中图分类物理学;
关键词
Mott insulators; V2O3; Mott transition; Resistive switching; Non-volatile memory; ReRAM;

机译：Mott Insulator;V2O3;Mott过渡;电阻切换;非易失性记忆;雷兰;

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专利

1. Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3 [J] . Querre M., Tranchant J., Corraze B., Physica, B. Condensed Matter . 2018,第期

机译：MOTT绝缘体（V1-XCRX）（2）O-3中的非易失性电阻切换
2. Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8 [J] . B. Corraze, E. Janod, L. Cario, The European Physical Journal Special Topics . 2013,第5期

机译：电场引起的雪崩击穿和Mott绝缘子AM4Q8中的非易失性电阻开关
3. Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM_4Q_8 [J] . Corraze B., Janod E., Cario L., The European physical journal: Special topics . 2013,第5期

机译：电场引起的雪崩击穿和Mott绝缘子AM_4Q_8中的非易失性电阻切换
4. Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory [C] . Souchier E., Vaju C., Guiot V., 2011 3rd IEEE International Memory Workshop . 2011

机译：由Mott绝缘子AM4X8中的电场驱动的电阻开关（A = Ga，Ge; M = V，Nb，Ta; X = S，Se）：迈向新型的非易失性RRAM存储器
5. Ultrafast Dynamics of Coupled Charge, Spin, and Orbital Degrees of Freedom in Perovskite-Based Mott-Hubbard Insulators [D] . Lovinger, Dylan. 2020

机译：基于Perovskite的Mott-Hubbard绝缘子的耦合电荷，旋转和轨道自由度的超快动态
6. Non-thermal resistive switching in Mott insulator nanowires [O] . Yoav Kalcheim, Alberto Camjayi, Javier del Valle, -1

机译：Mott绝缘体纳米线中的非热阻切换
7. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories [O] . Cario, Laurent, Vaju, Cristian, Corraze, Benoit, 2013

机译：莫特系列中的电场感应电阻切换绝缘体：朝向非易失性mott-RRam存储器

Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3

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