• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >On the Relation between Morphology and FET Mobility of Poly(3-alkylthiophene)s at the Polymer/SiO_2 and Polymer/Air Interface
【24h】

On the Relation between Morphology and FET Mobility of Poly(3-alkylthiophene)s at the Polymer/SiO_2 and Polymer/Air Interface

机译：聚（3-烷基噻吩）在聚合物/ SiO_2和聚合物/空气界面的形貌与FET迁移率的关系

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The influence of the interface of the dielectric SiO_2 on the performance of bottom-contact, bottom-gate poly(3-alkylthiophene) (P3AT) field-effect transistors (FETs) is investigated. In particular, the operation of transistors where the active polythiophene layer is directly spin-coated from chlorobenzene (CB) onto the bare SiO_2 dielectric is compared to those where the active layer is first spin-coated then laminated via a wet transfer process such that the film/air interface of this film contacts the SiO_2 surface. While an apparent alkyl side-chain length dependent mobility is observed for films directly spin-coated onto the SiO_2 dielectric (with mobilities of=10~(-3) cm~2 V~(-1) s~(-1) or less) for laminated films mobilities of 0.14 ± 0.03 cm~2 V~(-1) s~(-1) independent of alkyl chain length are recorded. Surface-sensitive near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements indicate a strong out-of-plane orientation of the polymer backbone at the original air/film interface while much lower average tilt angles of the polymer backbone are observed at the SiO_2/film interface. A comparison with NEXAFS on crystalline P3AT nanofibers, as well as molecular mechanics and electronic structure calculations on ideal P3AT crystals suggest a close to crystalline polymer organization at the P3AT/air interface of films from CB. These results emphasize the negative influence of wrongly oriented polymer on charge carrier mobility and highlight the potential of the polymer/air interface in achieving excellent "out-of-plane" orientation and high FET mobilities.
机译：研究了介电SiO_2的界面对底接触底栅聚3-烷基噻吩（P3AT）场效应晶体管（FET）性能的影响。特别是，将有源聚噻吩层直接从氯苯（CB）旋涂到裸SiO_2电介质上的晶体管的操作与先旋涂然后通过湿转移工艺层压有源层的晶体管的操作进行了比较，以便该膜的膜/空气界面接触SiO_2表面。对于直接旋涂在SiO_2电介质上的薄膜（迁移率等于或小于10〜（-3）cm〜2 V〜（-1）s〜（-1）的薄膜，观察到明显的烷基侧链长度依赖性迁移率）记录的层压膜的迁移率是0.14±0.03 cm〜2 V〜（-1）s〜（-1），与烷基链长无关。表面敏感的近边缘X射线吸收精细结构（NEXAFS）光谱测量表明，聚合物主链在原始空气/薄膜界面处的强平面外取向，而在该处观察到的聚合物主链的平均倾斜角低得多。 SiO_2 /膜界面。与NEXAFS在晶体P3AT纳米纤维上的比较，以及在理想P3AT晶体上的分子力学和电子结构计算表明，在CB薄膜的P3AT /空气界面处，晶体聚合物的组织接近。这些结果强调了错误取向的聚合物对电荷载流子迁移率的负面影响，并强调了聚合物/空气界面在实现出色的“面外”取向和高FET迁移率方面的潜力。

著录项

  • 来源
    《Advanced Functional Materials》 |2014年第14期|1994-2004|共11页
  • 作者

    Wibren D. Oosterbaan; Jean-Christophe Bolsee; Linjun Wang; Veerle Vrindts; Laurence J. Lutsen; Vincent Lemaur; David Beljonne; Christopher R. McNeill; Lars Thomsen; Jean V. Manca; Dirk J. M. Vanderzande;

  • 作者单位

    Hasselt University Campus Diepenbeek, Institute for Materials Research Agoralaan Building D, 3590, Diepenbeek, Belgium;

    Hasselt University Campus Diepenbeek, Institute for Materials Research Agoralaan Building D, 3590, Diepenbeek, Belgium;

    Laboratory for Chemistry of Novel Materials University of Mons Place du Parc 20, B-7000, Mons, Belgium;

    IMEC-IMOMEC Wetenschapspark 1, 3590, Diepenbeek, Belgium;

    IMEC-IMOMEC Wetenschapspark 1, 3590, Diepenbeek, Belgium;

    Laboratory for Chemistry of Novel Materials University of Mons Place du Parc 20, B-7000, Mons, Belgium;

    Laboratory for Chemistry of Novel Materials University of Mons Place du Parc 20, B-7000, Mons, Belgium;

    Optoelectronics Group, Cavendish Laboratory University of Cambridge J J Thomson Ave, Cambridge, CB3 0HE, UK,Department of Materials Engineering, Monash University, Wellington Road, Clayton, Victoria, 3800, Australia;

    Australian Synchrotron 800 Blackburn Road, Clayton, Vic-3168, Australia;

    Hasselt University Campus Diepenbeek, Institute for Materials Research Agoralaan Building D, 3590, Diepenbeek, Belgium,IMEC-IMOMEC Wetenschapspark 1, 3590, Diepenbeek, Belgium;

    Hasselt University Campus Diepenbeek, Institute for Materials Research Agoralaan Building D, 3590, Diepenbeek, Belgium,IMEC-IMOMEC Wetenschapspark 1, 3590, Diepenbeek, Belgium;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号