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首页> 外文期刊>Advanced Functional Materials >Transport Properties of Polymer Semiconductor Controlled by Ionic Liquid as a Gate Dielectric and a Pressure Medium
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Transport Properties of Polymer Semiconductor Controlled by Ionic Liquid as a Gate Dielectric and a Pressure Medium

机译：离子液体作为栅介质和压力介质控制聚合物的输运性质

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摘要

An effective way of using ionic liquid as a gate dielectric as well as a pressure medium to tune the transport of an exemplary polymer semiconductor, poly(2,5-bis(3-tetradecyl-thiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) is presented. Working as gate dielectrics, the ionic liquids exhibit the well-known ability to induce dense carriers (＞10~(20) cm~(-3)) in the polymer film contributing to the high conductivity (≈10~2 S cm~(-1)). In addition, it is found that the ionic liquid works as a pressure medium at the highly charged state, leading to significant enhancement of conductivity. By combining both gating and pressuring, a crossover of transport properties is observed from one-dimensional to three-dimensional hopping, as the clear indication that the polymer film has accessed the regime adjacent to the transition region between insulator and metal. These results show an effective way of utilizing pressure effect of ionic liquid as a new degree of freedom in controlling transport of polymers, a method having strong potential to be generalized for even broader range of materials.
机译：使用离子液体作为栅极电介质以及压力介质来调节示例性聚合物半导体（聚（2,5-双（3-十四烷基-噻吩-2-基）噻吩并[3,2]）的传输的有效方法-b]噻吩（pBTTT-C14）。离子液体起着栅极电介质的作用，具有在聚合物膜中诱导致密载流子（> 10〜（20）cm〜（-3））的众所周知的能力，从而有助于高电导率（≈10〜2 S cm〜（ -1））。另外，发现离子液体在高电荷状态下用作压力介质，导致电导率显着提高。通过结合浇口和加压，可以观察到传输特性从一维跳变到三维跳变，这清楚地表明聚合物膜已经进入了与绝缘体和金属之间的过渡区域相邻的区域。这些结果显示了利用离子液体的压力效应作为控制聚合物传输的新自由度的有效方法，该方法具有甚至在更广泛的材料范围上也具有普遍潜力。

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  • 来源
    《Advanced Functional Materials》 |2014年第14期|2005-2012|共8页
  • 作者

    Wu Shi; Jianting Ye; Joseph G. Checkelsky; Chieko Terakura; Yoshihiro Iwasa;

  • 作者单位

    Quantum-Phase Electronics Center and Department of Applied Physics University of Tokyo 7-3-1 Hongo, Bunkyo-ku Tokyo, 113-8656, Japan;

    Quantum-Phase Electronics Center and Department of Applied Physics University of Tokyo 7-3-1 Hongo, Bunkyo-ku Tokyo, 113-8656, Japan;

    Quantum-Phase Electronics Center and Department of Applied Physics University of Tokyo 7-3-1 Hongo, Bunkyo-ku Tokyo, 113-8656, Japan;

    Center for Emergent Matter Science RIKEN, Hirosawa 2-1, Wako, 351-0198, Japan;

    Quantum-Phase Electronics Center and Department of Applied Physics University of Tokyo 7-3-1 Hongo, Bunkyo-ku Tokyo, 113-8656, Japan,Center for Emergent Matter Science RIKEN, Hirosawa 2-1, Wako, 351-0198, Japan;

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