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Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics

机译：集成了等离子滤光片的光敏性非晶氧化物薄膜晶体管，用于透明电子产品

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摘要

Recently, research interests in amorphous oxide semiconductors (AOSs) as promising electronic materials have increased considerable. AOSs show superior characteristics necessary for electronic devices: high electron mobility, uniform surface due to its amorphous structure, and high transparency in the visible range. In particular, amorphous indium-gallium-zinc-oxide (a-IGZO) shows a mobility over 10 cm~2 V~(-1) s~(-1), which is large enough for operating standard displays such as organic light-emitting diodes (OLEDs) and liquid crystal displays (LCDs) with a fast driving scheme.
机译：近来，对作为有前途的电子材料的无定形氧化物半导体（AOS）的研究兴趣已大大增加。 AOS显示出电子设备必需的优越特性：高电子迁移率，由于其无定形结构而具有均匀的表面以及在可见光范围内的高透明度。特别是，非晶态铟镓锌氧化物（a-IGZO）的迁移率超过10 cm〜2 V〜（-1）s〜（-1），对于操作标准显示器（例如有机光显示器）足够大。快速驱动方案的发光二极管（OLED）和液晶显示器（LCD）。

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  • 来源
    《Advanced Functional Materials》 |2014年第23期|3482-3487|共6页
  • 作者

    Seongpil Chang; Yun Seon Do; Jong-Woo Kim; Bo Yeon Hwang; Jinnil Choi; Byung-Hyun Choi; Yun-Hi Lee; Kyung Cheol Choi; Byeong-Kwon Ju;

  • 作者单位

    Department of Electrical Engineering Korea University Seoul 136-713, Republic of Korea;

    Department of Electrical Engineering KAIST, Daejeon 305-701, Republic of Korea;

    Department of Electrical Engineering Korea University Seoul 136-713, Republic of Korea;

    Department of Electrical Engineering Korea University Seoul 136-713, Republic of Korea;

    Department of Mechanical Engineering Hanbat National University Daejeon 305-719, Republic of Korea;

    Electronic Materials and Module Team Korea Institute of Ceramic Engineering and Technology Seoul 153-801, Republic of Korea;

    Department of Physics Korea University Seoul 136-713, Republic of Korea;

    Department of Electrical Engineering KAIST, Daejeon 305-701, Republic of Korea;

    Department of Electrical Engineering Korea University Seoul 136-713, Republic of Korea;

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