Amorphous InGaZnO thin film transistors with bottom gate structure using transparent materials ITO and AZO as drain/source electrodes were fabricated by RF sputtering at room temperature. It was found that the fabricated TFTs exhibited good performance. For TFTs with AZO as electrodes,field effect mobility of 1. 95 cm/V · s,and on-off ratio of 4. 53×105 ,as well as a threshold voltage shift of 4. 49 V under positive bias stressing were achieved.%采用透明材料ITO和AZO为源漏电极,在室温下利用射频磁控溅射方法制作了底栅结构的非晶铟镓锌氧化物薄膜晶体管.实验发现,制备的薄膜晶体管均表现出了良好的开关特性.其中采用AZO为电极的薄膜晶体管的场效应迁移率为1.95 cm2/V·s,开关比为4.53× 105,在正向偏压应力测试下,阈值电压的漂移量为4.49V.
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