• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors
【24h】

Ultrahigh Responsivity of Ternary Sb-Bi-Se Nanowire Photodetectors

机译：三元Sb-Bi-Se纳米线光电探测器的超高响应度

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High-quality single-crystalline ternary (Sb_(1-x)Bi_x)_2Se_3 nanowires (NWs) (x = 0-0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb_(1-x)Bi_x)_2Se_3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb_(0.44)Bi_(0.56))_2Se_3 NW photodetector reach as high as ≈8261.4 A/W and ≈1.6 × 10~6 %, respectively. Those excellent performances unambiguously demonstrate that Sb-Bi-Se NWs are promising for the utilizations of high-sensitivity and high-speed photodetectors and photoelectronic switches.
机译：通过化学气相沉积法合成了高质量的单晶三元（Sb_（1-x）Bi_x）_2Se_3纳米线（NWs）（x = 0-0.88）。 x从0到0.75的纳米线被索引为正交结构。随着Bi掺入比例的增加，（Sb_（1-x）Bi_x）_2Se_3 NWs表现出显着的光响应性，其起因于表面硒空位的增加和氧化学吸附的增加。值得注意的是，（Sb_（0.44）Bi_（0.56））_ 2Se_3 NW光电探测器的光谱响应度和外部量子效率分别高达≈8261.4A / W和≈1.6×10〜6％。这些出色的性能清楚地表明，Sb-Bi-Se纳米线在使用高灵敏度，高速光电探测器和光电开关方面很有前途。

著录项

  • 来源
    《Advanced Functional Materials》 |2014年第23期|3581-3586|共6页
  • 作者

    Rong Huang; Jie Zhang; Fenfen Wei; Lin Shi; Tao Kong; Guosheng Cheng;

  • 作者单位

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China,University of Chinese Academy of Sciences 19A Yuquan Road, Beijing 100049, China;

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China,University of Chinese Academy of Sciences 19A Yuquan Road, Beijing 100049, China;

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China,University of Chinese Academy of Sciences 19A Yuquan Road, Beijing 100049, China;

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China;

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China;

    Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road, Suzhou Industrial Park Jiangsu 215123, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号