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首页> 外文期刊>Advanced Functional Materials >Integration of Self-Assembled Epitaxial BiFeO_3-CoFe_2O_4 Multiferroic Nanocomposites on Silicon Substrates
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Integration of Self-Assembled Epitaxial BiFeO_3-CoFe_2O_4 Multiferroic Nanocomposites on Silicon Substrates

机译：自组装外延BiFeO_3-CoFe_2O_4多铁性纳米复合材料在硅基底上的集成

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摘要

Perovskite-spinel epitaxial nanocomposite thin films are commonly grown on single crystal perovskite substrates, but integration onto a Si substrate can greatly increase their usefulness in devices. Epitaxial BiFeO_3-CoFe_2O_4 nanocomposites consisting of CoFe_2O_4 pillars in a BiFeO_3 matrix are grown on (001) Si with two types of buffer layers: molecular beam epitaxy (MBE)-grown SrTiO_3-coated Si and pulsed-laser-deposited (PLD) Sr(Ti_(0.65)Fe_(0.35))O_3/ CeO_2/yttria-stabilized ZrO_2/Si. The nanocomposite grows with the same crystallographic orientation and morphology as that observed on single crystal SrTiO_3 when the buffered Si substrates are smooth, but roughness of the Sr(Ti_(0.65)Fe_(0.35))O_3 promoted additional CoFe_2O_4 pillar orientations with 45° rotation. The nanocomposites on MBE-buffered Si show very high magnetic anisotropy resulting from magnetoelastic effects, whereas the hysteresis of nanocomposites on PLD-buffered Si can be understood as a combination of the hysteresis of the Sr(Ti_(0.65)Fe_(0.35))O_3 film and the CoFe_2O_4 pillars.
机译：钙钛矿-尖晶石外延纳米复合薄膜通常在钙钛矿单晶衬底上生长，但是集成到Si衬底上可以大大提高其在器件中的实用性。由BiFeO_3基质中的CoFe_2O_4柱组成的外延BiFeO_3-CoFe_2O_4纳米复合材料在（001）Si上生长，具有两种类型的缓冲层：分子束外延（MBE）生长的SrTiO_3涂层的Si和脉冲激光沉积（PLD）Sr（ Ti_（0.65）Fe_（0.35））O_3 / CeO_2 /氧化钇稳定的ZrO_2 / Si。当缓冲的Si衬底是光滑的时，纳米复合材料以与在单晶SrTiO_3上观察到的相同的晶体学取向和形态生长，但是Sr（Ti_（0.65）Fe_（0.35））O_3的粗糙度促进了45°旋转的其他CoFe_2O_4柱取向。 。 MBE缓冲的Si上的纳米复合材料由于磁弹性效应而表现出很高的磁各向异性，而PLD缓冲的Si上的纳米复合材料的磁滞可以理解为Sr（Ti_（0.65）Fe_（0.35））O_3的磁滞的组合。薄膜和CoFe_2O_4支柱。

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  • 来源
    《Advanced Functional Materials》 |2014年第37期|5889-5896|共8页
  • 作者

    Dong Hun Kim; Nicolas M. Aimon; Xue Yin Sun; Lior Kornblum; Fred. J. Walker; Charles. H. Ahn; Caroline A. Ross;

  • 作者单位

    Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, Massachusetts 02139, USA;

    Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, Massachusetts 02139, USA;

    Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, Massachusetts 02139, USA,School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001, PR China;

    Department of Applied Physics Yale University New Haven, CT 06520, USA;

    Department of Applied Physics Yale University New Haven, CT 06520, USA;

    Department of Applied Physics Yale University New Haven, CT 06520, USA;

    Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, Massachusetts 02139, USA;

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