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Epitaxial Growth of PbSe Quantum Dots on MoS_2 Nanosheets and their Near-Infrared Photoresponse

机译:Mos_2纳米片上PbSe量子点的外延生长及其近红外光响应

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摘要

A facile one-pot synthesis of hybrid materials consisting of PbSe quantum dots (QDs) that grow epitaxially on MoS_2 nanoflakes resulting in three equivalent orientation variants of the PbSe QDs with respect to the MoS_2 lattice is demonstrated. The epitaxial growth and cross-sectional high-resolution transmission electron microscopy (HRTEM) investigations verify a direct and linker-free contact between the quantum dots and the transition metal dichalcogenide (TMD) nanoflakes, while maintaining surface passivation of the PbSe with oleic acid ligands on the outside. Solution-processed photo-detectors based on PbSe-MoS_2 hybrids exhibit stable photoconduction when illuminated with near-IR light (wavelength > 1200 nm) without any laborious ligand-exchange steps. Flexible devices fabricated on polyethylene terephthalate (PET) substrates show excellent stability upon repeated bending. These hybrid materials are air-stable and solution-processable at low temperatures and thus promising for low-cost flexible near-IR photodetectors.
机译:证明了一种容易的一锅法合成的杂化材料,该杂化材料由在MoS_2纳米薄片上外延生长的PbSe量子点(QD)组成,从而导致PbSe QD相对于MoS_2晶格具有三个等效的取向变体。外延生长和横截面高分辨率透射电子显微镜(HRTEM)研究证明,量子点与过渡金属二卤化硅(TMD)纳米薄片之间存在直接且无接头的接触,同时保持了PbSe与油酸配体的表面钝化在外面。基于PbSe-MoS_2杂化物的溶液处理光电探测器在用近红外光(波长> 1200 nm)照射时显示稳定的光电导,而无需任何费力的配体交换步骤。在聚对苯二甲酸乙二酯(PET)基材上制造的柔性器件在反复弯曲后表现出出色的稳定性。这些混合材料在低温下是空气稳定且可溶液加工的,因此有望用于低成本的柔性近红外光电探测器。

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  • 来源
    《Advanced Functional Materials》 |2014年第37期|5798-5806|共9页
  • 作者单位

    Department of Materials Science Nanomaterials for Optoelectronics Group Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Materials Science Center for Nanoanalysis and Electron Microscopy Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Materials Science Nanomaterials for Optoelectronics Group Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Materials Science Nanomaterials for Optoelectronics Group Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Chemistry and Pharmacy Physical Chemistry Ⅰ Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Chemistry and Pharmacy Physical Chemistry Ⅰ Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Materials Science Center for Nanoanalysis and Electron Microscopy Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

    Department of Materials Science Nanomaterials for Optoelectronics Group Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen, Germany;

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