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A Solution-Processed UV-Sensitive Photodiode Produced Using a New Silicon Nanocrystal Ink

机译：使用新型硅纳米晶体油墨生产的溶液处理的紫外线敏感光电二极管

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摘要

This article presents a simple and effective method of functionalizing hydrogen-terminated silicon (Si) nanocrystals (NCs) to form a high-quality colloidal Si NC ink with short ligands that allow charge transport in nanocrystal solid films. Si NCs fabricated by laser-pyrolysis and acid etching are passivated with allyl disulfide via ultraviolet (UV)-initiated hydrosilyla-tion to form a stable colloidal Si NC ink. Then a Si NC-based photodiode is directly fabricated in air from this ink. Only a solution-processed poly(3,4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT: PSS) electron blocking layer and top- and bottom-contacts are needed along with the Si NC layer to construct the device. A Schottky-junction at the interface between the Si NC absorber layer and aluminum (Al) back electrode drives charge separation in the device under illumination. The unpackaged Si NC-based photodiode exhibites a peak photoresponse of 0.02 A W~(-1) to UV light in air, within an order of magnitude of the response of commercially available gallium phosphide (GaP), gallium nitride (GaN), and silicon carbide (SiC) based photodetectors. This provides a new pathway to large-area, low-cost solution-processed UV photodetectors on flexible substrates and demonstrates the potential of this new silicon nanocrystal ink for broader applications in solution-processed optoelectronics.
机译：本文提出了一种简单有效的方法，可对氢封端的硅（Si）纳米晶体（NC）进行功能化，以形成具有短配体的高质量胶体Si NC油墨，从而使电荷能够在纳米晶体固体膜中传输。通过紫外线（UV）引发的氢化硅烷化作用，将烯丙基二硫与通过激光热解和酸蚀刻制成的Si NC钝化，从而形成稳定的胶体Si NC油墨。然后，用这种墨水在空气中直接制成基于Si NC的光电二极管。仅需要溶液处理的聚（3,4-亚乙二氧基-噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）电子阻挡层以及顶部和底部触点以及Si NC层即可构成该器件。 Si NC吸收层和铝（Al）背电极之间的界面处的肖特基结在照明下驱动器件中的电荷分离。未包装的基于Si NC的光电二极管对空气中的紫外光表现出0.02 AW〜（-1）的峰值光响应，处于市售磷化镓（GaP），氮化镓（GaN）和硅的响应量级之内碳化物（SiC）光电探测器。这为在柔性基板上进行大面积，低成本溶液处理的紫外线光电探测器提供了一条新途径，并展示了这种新型硅纳米晶体油墨在溶液处理光电技术中的广泛应用的潜力。

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  • 来源
    《Advanced Functional Materials》 |2014年第38期|6016-6022|共7页
  • 作者

    Tao Lin; Xin Liu; Bin Zhou; Zhiyong Zhan; Alexander N. Cartwright; Mark T. Swihart;

  • 作者单位

    Department of Chemical and Biological Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA,National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and School of Physics Nanjing University Nanjing 210093, China;

    Department of Chemical and Biological Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA;

    Department of Electrical Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA;

    Department of Electrical Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA;

    Department of Electrical Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA;

    Department of Chemical and Biological Engineering University at Buffalo (SUNY) Buffalo, New York 14260, USA;

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