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Large-Area Synthesis of Continuous and Uniform MoS_2 Monolayer Films on Graphene

机译:石墨烯上连续均匀的MoS_2单层薄膜的大面积合成

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摘要

Heterostructures composed of multiple layers of different atomically thin materials are of interest due to their unique properties and potential for new device functionality. MoS_2-graphene heterostructures have shown promise as photodetectors and vertical tunnel transistors. However, progress is limited by the typically micrometer-scale devices and by the multiple alignments required for fabrication when utilizing mechanically exfoliated material. Here, the synthesis of large-area, continuous, and uniform MoS_2 monolayers directly on graphene by chemical vapor deposition is reported, resulting in heterostructure samples on the centimeter scale with the possibility for even larger lateral dimensions. Atomic force microscopy, photoluminescence, X-ray photoelectron, and Raman spectroscopies demonstrate uniform single-layer growth of stoichiometric MoS_2. The ability to reproducibly generate large-area heterostructures is highly advantageous for both fundamental investigations and technological applications.
机译:由多层不同原子薄材料组成的异质结构因其独特的性能和潜在的新器件功能而备受关注。 MoS_2-石墨烯异质结构已显示出有望用作光电探测器和垂直隧道晶体管。但是,进展受到典型的微米级设备和利用机械剥离材料时制造所需的多次对准的限制。在此,据报道通过化学气相沉积直接在石墨烯上合成了大面积,连续且均匀的MoS_2单层,从而导致了厘米级的异质结构样品,甚至可能产生更大的横向尺寸。原子力显微镜,光致发光,X射线光电子和拉曼光谱表明化学计量的MoS_2具有均匀的单层生长。可再生地生成大面积异质结构的能力对于基础研究和技术应用都非常有利。

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