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Improved Operational Stability of Polymer Light-Emitting Diodes Based on Silver Nanowire Electrode Through Pre-Bias Conditioning Treatment

机译:预偏置处理改善了基于银纳米线电极的聚合物发光二极管的工作稳定性

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摘要

For the first time, highly efficient and flexible polymer light emitting diodes (PLEDs) based on silver nanowire (AgNW) electrode, with improved operational stability by simply applying pre-bias conditioning treatment, are demonstrated. Reverse bias conditioning performed before J-V-L measurement of the PLEDs enables the rough AgNW networks to function properly as a bottom electrode by stabilizing current characteristics, and the devices continue to show consistent operational performances. Conditions of applied bias and thicknesses of active layer are controlled for optimization and it is found that high reverse voltage is required to obtain current stabilization. Adequate thickness of polymer is also necessary to avoid breakdown induced by reverse bias. The essential effect of pre-bias conditioning on the improved performances of PLEDs is investigated, and it is found that morphological change of AgNW networks contribute to the improvement in device performance. Some of the AgNWs that appear to be pathway of leakage current are deformed, and surface roughness (RMS) of the AgNW film is decreased while the sheet resistance of the film is maintained when the reverse bias conditioning is applied. It is also revealed that pre-bias conditioning is independent from directionality of the applied bias when utilizing insulating polymer sandwiched between two electrodes.
机译:首次展示了基于银纳米线(AgNW)电极的高效且柔性的聚合物发光二极管(PLED),该发光二极管通过简单地应用预偏置调理处理而具有改善的操作稳定性。在对PLED进行J-V-L测量之前执行的反向偏置调节使粗糙的AgNW网络能够通过稳定电流特性而适当地用作底部电极,并且器件继续显示出一致的工作性能。控制施加的偏压的条件和有源层的厚度以进行优化,并且发现需要高的反向电压以获得电流稳定。为了避免反向偏压引起的击穿,聚合物的厚度也必须足够。研究了预偏置条件对改善PLED性能的本质影响,发现AgNW网络的形态变化有助于改善器件性能。当应用反向偏压调节时,一些看起来像泄漏电流通路的AgNW会变形,并且在保持薄膜的薄层电阻的同时,AgNW薄膜的表面粗糙度(RMS)会降低。还揭示出,当利用夹在两个电极之间的绝缘聚合物时,预偏置调节与施加的偏置的方向无关。

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  • 来源
    《Advanced Functional Materials》 |2014年第41期|6465-6472|共8页
  • 作者单位

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea University 5-1 Anam, Sungbuk-gu, Seoul 136-701, Republic of Korea;

    Department of Materials Science and Engineering Korea University 5-1 Anam, Sungbuk-gu, Seoul 136-701, Republic of Korea;

    Department of Bionanotechnology Gachon University 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701, Republic of Korea;

    Department of Materials Science and Engineering Korea University 5-1 Anam, Sungbuk-gu, Seoul 136-701, Republic of Korea;

    Department of Materials Science and Engineering KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;

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